IRFP460
o
Absolute Maximum Ratings
T = 25 C, Unless Otherwise Specified
C
IRFP460
500
UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
V
V
A
A
A
V
W
DS
Drain to Gate Voltage (R
GS
= 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
500
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
20
12
D
D
o
T
= 100 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
C
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
80
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
±20
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
250
D
o
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2.0
W/ C
Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
960
mJ
AS
o
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T , T
J
-55 to 150
C
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
o
300
260
C
C
L
o
pkg
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
o
o
1. T = 25 C to T = 125 C.
J
J
o
Electrical Specifications
T = 25 C, Unless Otherwise Specified
C
PARAMETER
SYMBOL
BV
TEST CONDITIONS
= 0V (Figure 10)
MIN
TYP
-
MAX UNITS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
I
= 250µA, V
D GS
500
-
4
V
V
DSS
V
V
V
V
V
V
= V , I = 250µA
DS
2
-
-
GS(TH)
GS
DS
DS
DS
GS
D
Zero Gate Voltage Drain Current
I
= Rated BV
, V
DSS GS
= 0V
-
25
µA
µA
A
DSS
o
= 0.8 x Rated BV
, V
= 0V, T = 125 C
-
-
250
-
DSS GS
J
On-State Drain Current (Note 2)
Gate to Source Leakage Current
I
> I
D(ON)
x r
DS(ON)MAX GS
, V
= 10V
20
-
-
D(ON)
I
= ±20V
-
±100
0.27
-
nA
Ω
GSS
Drain to Source On Resistance (Note 2)
Forward Transconductance (Note 2)
Turn-On Delay Time
r
I
= 11A, V
D GS
= 10V (Figures 8, 9)
> 11A (Figure 12)
= 4.3Ω, R = 12Ω,
-
0.24
19
23
81
85
65
120
DS(ON)
g
V
≥ 50V, I
DS
13
-
S
DS
fs
t
V
V
= 250V, I = 21A, R
GS
35
ns
ns
ns
ns
nC
d(ON)
DD
GS
D
D
= 10V MOSFET Switching Times are Essentially
Rise Time
t
-
120
130
98
r
Independent of Operating Temperature
Turn-Off Delay Time
t
-
d(OFF)
Fall Time
t
-
f
Total Gate Charge
Q
V
= 10V, I = 21A, V
= 0.8 x Rated BV
DSS,
-
190
g(TOT)
GS
D
DS
(Gate to Source + Gate-Drain)
I
= 1.5mA (Figure 14). Gate Charge is
G(REF)
Essentially Independent of OperatingTemperature
Gate to Source Charge
Gate to Drain “Miller” Charge
Input Capacitance
Q
Q
-
-
-
-
-
-
18
62
-
-
-
-
-
-
nC
nC
pF
pF
pF
nH
gs
gd
C
V
= 25V, V
DS GS
= 0V, f = 1MHz (Figure 10)
4100
480
84
ISS
Output Capacitance
C
OSS
RSS
Reverse Transfer Capacitance
Internal Drain Inductance
C
L
Measured from the Drain
Lead, 6mm (0.25in) from
Package to Center of Die
Modified MOSFET
Symbol Showing the
Internal Device
5.0
D
Inductances
Internal Source Inductance
L
Measured from the Source
Lead, 6mm (0.25in) from
Header to Source Bonding
Pad
-
13
-
nH
S
D
L
D
G
L
S
S
o
o
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
R
R
-
-
-
-
0.50
30
C/W
C/W
θJC
Free Air Operation
θJA
4-360
INTERSIL [ Intersil ]
