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CD4514 参数 Datasheet PDF下载

CD4514图片预览
型号: CD4514
PDF下载: 下载PDF文件 查看货源
内容描述: CMOS 4位锁存器/ 4至16线路解码器 [CMOS 4-Bit Latch/4-to-16 Line Decoders]
分类和应用: 解码器锁存器
文件页数/大小: 10 页 / 82 K
品牌: INTERSIL [ Intersil ]
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Specifications CD4514BMS, CD4515BMS  
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)  
LIMITS  
MIN  
PARAMETER  
SYMBOL  
CONDITIONS  
NOTES  
1, 2, 3  
1, 2, 3  
1, 2, 3  
1, 2, 3  
1, 2, 3  
1, 2, 3  
1, 2, 3  
1, 2, 3  
1, 2, 3  
1, 2, 3  
1, 2, 3  
1, 2, 3  
1, 2  
TEMPERATURE  
MAX  
370  
270  
220  
170  
100  
80  
UNITS  
ns  
o
Propagation Delay  
Strobe or Datat  
TPHL1 VDD = 10V  
TPLH1  
+25 C  
-
-
-
-
-
-
-
-
-
-
-
-
-
o
VDD = 15V  
+25 C  
ns  
o
Propagation Delay  
Inhibit  
TPHL2 VDD = 10V  
TPLH2  
+25 C  
ns  
o
VDD = 15V  
+25 C  
ns  
o
Transition Time  
TTHL  
TTLH  
VDD = 10V  
VDD = 15V  
VDD = 5V  
VDD = 10V  
VDD = 15V  
VDD = 5V  
VDD = 10V  
VDD = 15V  
Any Input  
+25 C  
ns  
o
+25 C  
ns  
o
Minimum Data Setup  
Time  
TS  
TW  
CIN  
+25 C  
150  
70  
ns  
o
+25 C  
ns  
o
+25 C  
40  
ns  
o
Minimum Strobe Pulse  
Width  
+25 C  
250  
100  
75  
ns  
o
+25 C  
ns  
o
+25 C  
ns  
o
Input Capacitance  
NOTES:  
+25 C  
7.5  
pF  
1. All voltages referenced to device GND.  
2. The parameters listed on Table 3 are controlled via design or process and are not directly tested. These parameters are characterized  
on initial design release and upon design changes which would affect these characteristics.  
3. CL = 50pF, RL = 200K, Input TR, TF < 20ns.  
TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS  
LIMITS  
PARAMETER  
Supply Current  
SYMBOL  
IDD  
CONDITIONS  
NOTES  
1, 4  
TEMPERATURE  
MIN  
MAX  
25  
UNITS  
o
VDD = 20V, VIN = VDD or GND  
VDD = 10V, ISS = -10µA  
VDD = 10V, ISS = -10µA  
+25 C  
-
-2.8  
-
µA  
V
o
N Threshold Voltage  
VNTH  
VTN  
1, 4  
+25 C  
-0.2  
±1  
o
N Threshold Voltage  
Delta  
1, 4  
+25 C  
V
o
P Threshold Voltage  
VTP  
VSS = 0V, IDD = 10µA  
VSS = 0V, IDD = 10µA  
1, 4  
1, 4  
+25 C  
0.2  
-
2.8  
V
V
o
P Threshold Voltage  
Delta  
VTP  
+25 C  
±1  
o
Functional  
F
VDD = 18V, VIN = VDD or GND  
VDD = 3V, VIN = VDD or GND  
VDD = 5V  
1
+25 C  
VOH >  
VDD/2  
VOL <  
VDD/2  
V
o
Propagation Delay Time  
TPHL  
TPLH  
1, 2, 3, 4  
+25 C  
-
1.35 x  
ns  
o
+25 C  
Limit  
o
NOTES: 1. All voltages referenced to device GND.  
2. CL = 50pF, RL = 200K, Input TR, TF < 20ns.  
3. See Table 2 for +25 C limit.  
4. Read and Record  
o
TABLE 5. BURN-IN AND LIFE TEST DELTA PARAMETERS +25 C  
PARAMETER  
Supply Current - MSI-2  
Output Current (Sink)  
Output Current (Source)  
SYMBOL  
IDD  
DELTA LIMIT  
± 1.0µA  
IOL5  
± 20% x Pre-Test Reading  
± 20% x Pre-Test Reading  
IOH5A  
7-1191  
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