CA3127
Absolute Maximum Ratings
The following ratings apply for each transistor in the device
Thermal Information
Thermal Resistance (Typical, Note 2)
o
θJA ( C/W)
Collector-to-Emitter Voltage, V
. . . . . . . . . . . . . . . . . . . . . 15V
. . . . . . . . . . . . . . . . . . . . . . . 20V
CEO
PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
SOIC Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
90
175
Collector-to-Base Voltage, V
CBO
Collector-to-Substrate Voltage, V
(Note 1). . . . . . . . . . . . . 20V
CIO
Maximum Power Dissipation, P (Any One Transistor). . . . . . 85mW
D
o
Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20mA
C
Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . 175 C
Maximum Junction Temperature (Plastic Packages). . . . . . . . 150 C
Maximum Storage Temperature Range . . . . . . . . . -65 C to 150 C
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . . 300 C
o
o
o
Operating Conditions
o
o
o
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55 C to 125 C
(SOIC - Lead Tips Only)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The collector of each transistor of the CA3127 is isolated from the substrate by an integral diode. The substrate (Terminal 5) must be con-
nected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action.
2. θ is measured with the component mounted on an evaluation PC board in free air.
JA
o
Electrical Specifications T = 25 C
A
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
DC CHARACTERISTICS (For Each Transistor)
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Substrate Breakdown-Voltage
Emitter-to-Base Breakdown Voltage (Note 3)
Collector-Cutoff-Current
I
I
I
I
= 10µA, I = 0
20
15
20
4
32
24
-
V
V
C
E
= 1mA, I = 0
-
C
B
= 10µA, I = 0, I = 0
60
-
-
V
C1
B
E
= 10µA, I = 0
5.7
-
V
E
C
V
V
V
= 10V I = 0
-
0.5
40
-
µA
nA
CE
CB
CE
B
Collector-Cutoff-Current
= 10V, I = 0
-
-
E
DC Forward-Current Transfer Ratio
= 6V
I
I
I
I
I
I
= 5mA
= 1mA
= 0.1mA
= 5mA
= 1mA
= 0.1mA
35
40
35
0.71
0.66
0.60
-
88
C
C
C
C
C
C
90
-
85
-
Base-to-Emitter Voltage
V
= 6V
0.81
0.76
0.70
0.26
0.5
0.2
0.91
0.86
0.80
0.50
5
V
V
CE
V
Collector-to-Emitter Saturation Voltage
I
= 10mA, I = 1mA
V
C
B
Magnitude of Difference in V
Q and Q Matched
V
-
mV
µA
BE
1
2
= 6V, I = 1mA
CE
C
Magnitude of Difference in I
-
3
B
DYNAMIC CHARACTERISTICS
Noise Figure
f = 100kHz, R = 500Ω, I = 1mA
-
-
2.2
-
-
-
-
-
-
-
-
-
-
-
-
-
dB
GHz
pF
pF
pF
dB
dB
dB
Ω
S
C
Gain-Bandwidth Product
Collector-to-Base Capacitance
Collector-to-Substrate Capacitance
Emitter-to-Base Capacitance
Voltage Gain
V
V
V
V
V
= 6V, I = 5mA
1.15
CE
CB
CI
C
= 6V, f = 1MHz
= 6V, f = 1MHz
= 4V, f = 1MHz
-
See
Fig. 5
-
-
BE
CE
= 6V, f = 10MHz, R = 1kΩ, I = 1mA
-
28
30
L
C
Power Gain
Cascode Configuration
27
-
f = 100MHz, V+ = 12V, I = 1mA
C
Noise Figure
3.5
400
4.6
3.7
2
Input Resistance
Common-Emitter Configuration
-
V
= 6V, I = 1mA, f = 200 MHz
C
CE
Output Resistance
-
kΩ
pF
pF
mS
Input Capacitance
-
Output Capacitance
Magnitude of Forward Transadmittance
NOTE:
-
-
24
3. When used as a zener for reference voltage, the device must not be subjected to more than 0.1mJ of energy from any possible capacitance
or electrostatic discharge in order to prevent degradation of the junction. Maximum operating zener current should be less than 10mA.
5-2
INTERSIL [ Intersil ]
