CA3127
High Frequency NPN Transistor Array
August 1996
Features
Description
• Gain Bandwidth Product (fT). . . . . . . . . . . . . . . . >1GHz The CA3127 consists of five general purpose silicon NPN
transistors on a common monolithic substrate. Each of the
completely isolated transistors exhibits low 1/f noise and a
• Power Gain . . . . . . . . . . . . . . . . . 30dB (Typ) at 100MHz
value of fT in excess of 1GHz, making the CA3127 useful
from DC to 500MHz. Access is provided to each of the termi-
nals for the individual transistors and a separate substrate
connection has been provided for maximum application flexi-
bility. The monolithic construction of the CA3127 provides
close electrical and thermal matching of the five transistors.
• Noise Figure . . . . . . . . . . . . . . . . 3.5dB (Typ) at 100MHz
• Five Independent Transistors on a Common Substrate
Applications
• VHF Amplifiers
• Multifunction Combinations - RF/Mixer/Oscillator
• Sense Amplifiers
• Synchronous Detectors
• VHF Mixers
Ordering Information
PART
NUMBER
(BRAND)
TEMP.
RANGE ( C)
PKG.
NO.
o
PACKAGE
CA3127E
-55 to 125 16 Ld PDIP
-55 to 125 16 Ld SOIC
E16.3
M16.15
• IF Converter
CA3127M
(3127)
• IF Amplifiers
• Synthesizers
CA3127M96
(3127)
-55 to 125 16 Ld SOIC Tape and Reel M16.15
• Cascade Amplifiers
Pinout
CA3127
(PDIP, SOIC)
TOP VIEW
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
Q1
Q2
Q5
Q4
SUBSTRATE
Q3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
File Number 662.3
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