HS-565BRH, HS-565BEH
Die Characteristics
DIE DIMENSIONS:
179 mils x 107 mils x 19 mils
ASSEMBLY RELATED INFORMATION
Substrate Potential:
Tie Substrate to VREF GND
INTERFACE MATERIALS:
Glassivation:
Type: AlCu
Thickness: 8k
Å
±1k
Å
Top Metallization:
Type: Al/Copper
Thickness: 16k
Å
±2k
Å
Substrate:
Bipolar DI,
Backside Finish:
Silicon
ADDITIONAL INFORMATION:
Worst Case Current Density:
2.0 x 10
5
A/cm
2
Transistor Count:
200
Metallization Mask Layout
HS-565BRH, HS-565BEH
VCC NC
3
3
NC
1
A
(MSB)
BIT 1
BIT 2
VREF OUT
VREF
GND
BIT 3
BIT 4
BIT 5
VREF IN
-VS
BIPOLAR
12
BIT 7
IDAC
OUT
BIT 8
BIT 6
BIT 9
10V
SPAN
20V
SPAN
POWER
GND
BIT 12
(LSB)
BIT 11
BIT 10
7
FN4607.4
May 7, 2012