HS-565ARH
Die Characteristics
DIE DIMENSIONS:
179 mils x 107 mils x 19 mils
INTERFACE MATERIALS:
Glassivation:
Type: AlCu
Thickness: 8k
Å
±1k
Å
Top Metallization:
Type: Al/Copper
Thickness: 16k
Å
±2k
Å
Substrate:
Bipolar DI,
Backside Finish:
Silicon
ASSEMBLY RELATED INFORMATION
Substrate Potential:
Tie Substrate to VREF GND
ADDITIONAL INFORMATION:
Worst Case Current Density:
2.0 x 10
5
A/cm
2
Transistor Count:
200
Metallization Mask Layout
HS-565ARH
VCC
3
NC
3
NC
1
A
(MSB)
BIT 1
BIT 2
VREF OUT
VREF
GND
BIT 3
BIT 4
BIT 5
VREF IN
-VS
BIPOLAR
12
BIT 7
IDAC
OUT
BIT 8
BIT 6
BIT 9
10V
SPAN
20V
SPAN
POWER
GND
BIT 12
(LSB)
BIT 11
BIT 10
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ISO9000
quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
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7
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