Specifications HS-80C85RH
Absolute Maximum Ratings
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +7.0V
Input, Output or I/O Voltage . . . . . . . . . . . . GND-0.3V to VCC+0.3V
Storage Temperature Range . . . . . . . . . . . . . . . . . -65
o
C to +150
o
C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +300
o
C
Typical Derating Factor. . . . . . . . . . .2.0mA/MHz Increase in IDDOP
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Reliability Information
Thermal Resistance
θ
JA
θ
JC
o
C/W
SBDIP Package. . . . . . . . . . . . . . . . . . . .
45
10
o
C/W
Ceramic Flatpack Package . . . . . . . . . . .
77
o
C/W
13
o
C/W
o
C Ambient
Maximum Package Power Dissipation at +125
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.11W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.65W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22.2mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . 13.0mW/
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Supply Voltage Range (VDD) . . . . . . . +4.75V to +5.25V
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0V to +0.8V
Input High Voltage. . . . . . . . . . . . . . . . . . . . . . . . VDD -0.5V to VDD
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP A
SUBGROUPS
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
1, 2, 3
7, 8A, 8B
LIMITS
TEMPERATURE
-55
o
C,
+25
o
C,
or
+125
o
C
-55
o
C, +25
o
C, or
+125
o
C
-55
o
C, +25
o
C, or
+125
o
C
-55
o
C, +25
o
C, or
+125
o
C
-55
o
C, +25
o
C, or
+125
o
C
-55
o
C, +25
o
C, or
+125
o
C
VDD -0.5
-
-
-
-
-
0.5
500
5.0
-
MIN
-1.0
MAX
1.0
UNITS
µA
V
V
µA
mA/MHz
-
PARAMETER
Input Leakage
Current
High Level Output
Voltage
Low Level Output
Voltage
Static Current
Operating Supply
Current (Note 2)
Functional Tests
SYMBOL
IIH or
IIL
VOH
VOL
IDDSB
IDDOP
FT
CONDITIONS
VDD = 5.25V, VI = VDD
or GND
VDD = 4.75V, IOH = -1.0mA
VDD = 5.25V, IOL = 1.0mA,
VDD = 5.25V, Clock Out = Hi
and Low
VDD = 5.25V, f = 1MHz
(Note 2)
VDD = 4.75V and 5.25V,
TCYC = 500ns,
VOL
≤
VDD/2, VOH
≥
VDD/2
NOTES:
1. All devices guaranteed at worst case limits and over radiation.
2. Operating supply current (IDDOP) is proportional to crystal frequency. Parts are tested at 1MHz
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP A
SUBGROUPS
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
LIMITS
TEMPERATURE
-55
o
C, +25
o
C, +125
o
C
-55
o
C, +25
o
C, +125
o
C
-55
o
C, +25
o
C, +125
o
C
-55
o
C, +25
o
C, +125
o
C
-55
o
C, +25
o
C, +125
o
C
-55
o
C, +25
o
C, +125
o
C
-55
o
C, +25
o
C, +125
o
C
-55
o
C, +25
o
C, +125
o
C
-55
o
C, +25
o
C, +125
o
C
-55
o
C, +25
o
C, +125
o
C
MIN
40
100
-
-
30
50
300
300
875
-
MAX
-
-
115
115
250
275
-
-
-
70
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
PARAMETER
CLK Low Time (Standard CLK Loading)
CLK High Time (Standard CLK Loading)
CLK Rise Time
CLK Fall Time
X1 Rising to CLK Rising
X1 Rising to CLK Falling
A8-15 Valid to Leading Edge of Control (Note 5)
A0-7 Valid to Leading Edge of Control
A0-15 Valid to Valid Data In
Address Float After Leading Edge of READ
(INTA)
SYMBOL
T1
T2
Tr
Tf
TXKR
TXKF
TAC
TACL
TAD
TAFR
Spec Number
5
518054
INTERSIL [ INTERSIL CORPORATION ]
