Specifications HS-80C85RH
Absolute Maximum Ratings
Reliability Information
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+7.0V Thermal Resistance
Input, Output or I/O Voltage . . . . . . . . . . . . GND-0.3V to VCC+0.3V SBDIP Package. . . . . . . . . . . . . . . . . . . .
Ceramic Flatpack Package . . . . . . . . . . .
θ
θ
JA
JC
o
o
45 C/W
10 C/W
o
o
o
o
Storage Temperature Range . . . . . . . . . . . . . . . . . -65 C to +150 C
77 C/W
13 C/W
o
o
Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175 C
Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300 C
Maximum Package Power Dissipation at +125 C Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.11W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.65W
o
Typical Derating Factor. . . . . . . . . . .2.0mA/MHz Increase in IDDOP
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1 If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
o
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22.2mW/ C
o
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . 13.0mW/ C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Supply Voltage Range (VDD) . . . . . . . +4.75V to +5.25V
Input Low Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0V to +0.8V
Input High Voltage. . . . . . . . . . . . . . . . . . . . . . . . VDD -0.5V to VDD
o
o
Operating Temperature Range (T ) . . . . . . . . . . . . -55 C to +125 C
A
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
MAX
GROUP A
SUBGROUPS TEMPERATURE
PARAMETER
SYMBOL
CONDITIONS
MIN
UNITS
o
o
Input Leakage
Current
IIH or
IIL
VDD = 5.25V, VI = VDD
or GND
1, 2, 3
-55 C, +25 C, or
-1.0
1.0
µA
o
+125 C
o
o
High Level Output
Voltage
VOH
VDD = 4.75V, IOH = -1.0mA
1, 2, 3
-55 C, +25 C, or VDD -0.5
-
V
o
+125 C
o
o
Low Level Output
Voltage
VOL
VDD = 5.25V, IOL = 1.0mA,
1, 2, 3
-55 C, +25 C, or
-
-
-
-
0.5
500
5.0
-
V
o
+125 C
o
o
Static Current
IDDSB
IDDOP
FT
VDD = 5.25V, Clock Out = Hi
and Low
1, 2, 3
-55 C, +25 C, or
µA
mA/MHz
-
o
+125 C
o
o
Operating Supply
Current (Note 2)
VDD = 5.25V, f = 1MHz
(Note 2)
1, 2, 3
-55 C, +25 C, or
o
+125 C
o
o
Functional Tests
VDD = 4.75V and 5.25V,
TCYC = 500ns,
7, 8A, 8B
-55 C, +25 C, or
o
+125 C
VOL ≤ VDD/2, VOH ≥ VDD/2
NOTES:
1. All devices guaranteed at worst case limits and over radiation.
2. Operating supply current (IDDOP) is proportional to crystal frequency. Parts are tested at 1MHz
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP A
LIMITS
PARAMETER
CLK Low Time (Standard CLK Loading)
CLK High Time (Standard CLK Loading)
CLK Rise Time
SYMBOL SUBGROUPS
TEMPERATURE
MIN
MAX
UNITS
ns
o
o
o
T1
T2
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
9, 10, 11
-55 C, +25 C, +125 C
40
100
-
-
-
o
o
o
-55 C, +25 C, +125 C
ns
o
o
o
Tr
-55 C, +25 C, +125 C
115
115
250
275
-
ns
o
o
o
CLK Fall Time
Tf
-55 C, +25 C, +125 C
-
ns
o
o
o
X1 Rising to CLK Rising
TXKR
TXKF
TAC
TACL
TAD
TAFR
-55 C, +25 C, +125 C
30
50
300
300
875
-
ns
o
o
o
X1 Rising to CLK Falling
-55 C, +25 C, +125 C
ns
o
o
o
A8-15 Valid to Leading Edge of Control (Note 5)
A0-7 Valid to Leading Edge of Control
A0-15 Valid to Valid Data In
-55 C, +25 C, +125 C
ns
o
o
o
-55 C, +25 C, +125 C
-
ns
o
o
o
-55 C, +25 C, +125 C
-
ns
o
o
o
Address Float After Leading Edge of READ
(INTA)
-55 C, +25 C, +125 C
70
ns
Spec Number 518054
5
INTERSIL [ Intersil ]
