ISL70218SEH
V
S
±15V, V
CM
= 0, V
O
= 0V, R
L
= Open, T
A
= +25°C, unless otherwise noted. Boldface limits apply over a total
ionizing dose of 100krad(Si) with exposure at a high dose rate of 50 - 300krad(Si)/s; and over a total ionizing dose of 50krad(Si) with exposure at a low
dose rate of <10mrad(Si)/s.
(Continued)
MIN
PARAMETER
PSRR
DESCRIPTION
Power Supply Rejection Ratio
CONDITIONS
V
S
= 3V to 40V,
V
CMIR
= Valid Input Voltage
R
L
= 10kΩ to ground
V
O
= -13V to +13V
R
L
= 10kΩ
Electrical Specifications
(Note
5)
105
100
120
115
TYP
124
MAX
(Note 5)
UNIT
dB
dB
A
VOL
Open-Loop Gain
130
dB
dB
110
120
mV
mV
mV
mV
mA
mA
mA
mA
40
V
V
OH
Output Voltage High,
V
+
to V
OUT
Output Voltage Low,
V
OUT
to V
-
Supply Current/Amplifier
V
OL
R
L
= 10kΩ
70
80
0.85
1.1
1.4
I
S
I
S+
I
S-
V
SUPPLY
GBW
e
np-p
e
n
e
n
e
n
e
n
in
THD + N
Source Current Capability
Sink Current Capability
Supply Voltage Range
Guaranteed by PSRR
10
10
3
AC SPECIFICATIONS
Gain Bandwidth Product
Voltage Noise
Voltage Noise Density
Voltage Noise Density
Voltage Noise Density
Voltage Noise Density
Current Noise Density
Total Harmonic Distortion + Noise
A
CL
= 101, V
OUT
= 100mV
P-P
;
R
L
= 2k
0.1Hz to 10Hz, V
S
= ±18V
f = 10Hz, V
S
= ±18V
f = 100Hz, V
S
= ±18V
f = 1kHz, V
S
= ±18V
f = 10kHz, V
S
= ±18V
f = 1kHz, V
S
= ±18V
1kHz, G = 1, V
O
= 3.5V
RMS
,
R
L
= 10kΩ
A
V
= 1, R
L
= 2kΩ, V
O
= 10V
P-P
±1.0
±0.4
t
r
, t
f
, Small
Signal
Rise Time
10% to 90% of V
OUT
Fall Time
90% to 10% of V
OUT
t
s
OS+
Settling Time to 0.01%
10V Step; 10% to V
OUT
Positive Overshoot
A
V
= 1, V
OUT
= 100mV
P-P
, R
f
= 0Ω,
R
L
= 2kΩ to V
CM
A
V
= 1, V
OUT
= 100mV
P-P
, R
f
= 0Ω,
R
L
= 2kΩ to V
CM
A
V
= 1, V
OUT
= 10V
P-P
, R
f
= 0Ω
R
L
= 2kΩ to V
CM
A
V
= 1, V
OUT
= 10V
P-P
, R
f
= 0Ω
R
L
= 2kΩ to V
CM
A
V
= 1, V
OUT
= 10V
P-P
, R
f
= 0Ω
R
L
= 2kΩ to V
CM
100
230
400
100
200
400
8.5
5
35
5
35
4
300
8.5
5.8
5.6
5.6
355
0.0003
MHz
nV
P-P
nV/√Hz
nV/√Hz
nV/√Hz
nV/√Hz
fA/√Hz
%
TRANSIENT RESPONSE
SR
Slew Rate
±1.2
V/µs
V/µs
ns
ns
ns
ns
µs
%
%
%
%
OS-
Negative Overshoot
5
FN7957.1
August 24, 2012