ISL70218SEH
High Dose Rate Post Radiation Characteristics
PARAMETER
V
OS
I
OS
I
B
CMRR
PSRR
A
VOL
V
OH
V
OL
I
S
DESCRIPTION
Offset Voltage
Input Offset Current
Input Bias Current
Common-Mode Rejection Ration
Power Supply Rejection Ratio
Open-Loop Gain
Output Voltage High
V
+
to V
OUT
Output Voltage Low
V
OUT
to V
-
Supply Current/Amplifier
V
CM
= -13V to +13V
V
S
= ±2.25V to ±15V
V
O
= -13V to +13V
R
L
= 10kΩ to ground
R
L
= 10kΩ to ground
R
L
= 10kΩ to ground
V
S
±15V, V
CM
= 0V, V
O
= 0V, R
L
= Open, T
A
= +25°C, unless otherwise
noted. This data is typical test data post radiation exposure at a rate of 50 to 300rad(Si)/s. This data is intended to show typical parameter shifts due to
high dose rate radiation. These are not limits nor are they guaranteed.
CONDITIONS
50k RAD
35
2
200
129
130
131.6
71
54
830
75k RAD
35
3
400
128
130
131.1
74
57
830
100k RAD
35
5
575
127
130
131.1
76
59
830
UNIT
µV
nA
nA
dB
dB
dB
mV
mV
µA
TRANSIENT RESPONSE
SR
Slew Rate
A
V
= 10, R
L
= 2kΩ, V
O
= 4V
P-P
1.24
1.23
1.22
V/µs
Low Dose Rate Post Radiation Characteristics
PARAMETER
V
OS
I
OS
I
B
I
S
DESCRIPTION
Offset Voltage
Input Offset Current
Input Bias Current
Supply Current/Amplifier
V
S
±15V, V
CM
= 0V, V
O
= 0V, R
L
= Open, T
A
= +25°C, unless otherwise
noted. This data is typical test data post radiation exposure at a rate of 10mrad(Si)/s. This data is intended to show typical parameter shifts due to low
dose rate radiation. These are not limits nor are they guaranteed.
CONDITIONS
10k RAD
20
6
300
650
20k RAD
20
8
500
625
50k RAD
20
10
1200
615
UNIT
µV
nA
nA
µA
7
FN7957.1
August 24, 2012
INTERSIL [ INTERSIL CORPORATION ]
