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SI3443DVPBF 参数 Datasheet PDF下载

SI3443DVPBF图片预览
型号: SI3443DVPBF
PDF下载: 下载PDF文件 查看货源
内容描述: HEXFET功率MOSFET [HEXFET Power MOSFET]
分类和应用:
文件页数/大小: 7 页 / 109 K
品牌: INTERFET [ INTERFET CORPORATION ]
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Si3443DVPbF
5.0
E
AS
, Single Pulse Avalanche Energy (mJ)
80
4.0
ID
-1.3A
-2.4A
BOTTOM -3.0A
TOP
-I
D
, Drain Current (A)
60
3.0
40
2.0
20
1.0
0.0
0
25
50
75
100
125
150
25
50
75
100
125
150
T
C
, Case Temperature ( °C)
Starting T
J
, Junction Temperature (
°
C)
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Maximum Avalanche Energy
Vs. Drain Current
100
D = 0.50
Thermal Response (Z
thJA
)
0.20
10
0.10
0.05
0.02
1
0.01
t
1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJA
+ T
A
0.0001
0.001
0.01
0.1
1
10
100
t
2
P
DM
0.1
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5