Si3443DVPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Min.
-20
–––
–––
–––
–––
-0.60
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V
V
GS
= 0V, I
D
= -250µA
-0.005 ––– V/°C Reference to 25°C, I
D
= -1mA
0.034 0.065
V
GS
= -4.5V, I
D
= -4.4A
0.053 0.090
Ω
V
GS
= -2.7V, I
D
= -3.7A
0.060 0.100
V
GS
= -2.5V, I
D
= -3.5A
––– -1.2
V
V
DS
= V
GS
, I
D
= -250µA
12 –––
S
V
DS
= -10V, I
D
= -4.4 A
––– -1.0
V
DS
= -20V, V
GS
= 0V
µA
––– -5.0
V
DS
= -20V, V
GS
= 0V, T
J
= 70°C
––– -100
V
GS
= -12V
nA
––– 100
V
GS
= 12V
11
15
I
D
= -4.4A
2.2 –––
nC
V
DS
= -10V
2.9 –––
V
GS
= -4.5V
12
50
V
DD
= -10V, V
GS
= -4.5V
33
60
I
D
= -1.0A
ns
70 100
R
G
= 6.0
Ω
72 100
R
D
= 10
Ω,
1079 –––
V
GS
= 0V
220 –––
pF
V
DS
= -10V
152 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
–––
–––
–––
–––
51
30
-2.0
A
-20
-1.2
77
44
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -1.7A, V
GS
= 0V
T
J
= 25°C, I
F
= -1.7A
di/dt = -100A/µs
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Surface mounted on FR-4 board, t
≤
5sec.
Starting T
J
= 25°C, L = 6.8mH
R
G
= 25Ω, I
AS
= -3.0A.
Pulse width
≤
300µs; duty cycle
≤
2%.
2
www.irf.com
INTERFET [ INTERFET CORPORATION ]
