Si3443DVPbF
1600
-V
GS
, Gate-to-Source Voltage (V)
V
GS
= 0V,
f = 1MHz
C
iss
= C
gs
+ C
gd ,
C
ds
SHORTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
15
I
D
=
-4.5A
12
C, Capacitance (pF)
1200
Ciss
V
DS
=-10V
9
800
6
400
Coss
Crss
0
1
10
100
3
0
0
4
8
12
16
20
24
-V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
-I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
-I
D
, Drain Current (A)
I
100
10us
10
100us
1ms
1
10ms
T
J
= 150
°
C
T
J
= 25
°
C
1
0.1
0.0
V
GS
= 0 V
0.4
0.8
1.2
1.6
2.0
2.4
0.1
0.1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
1
10
100
-V
SD
,Source-to-Drain Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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