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TE28F320 参数 Datasheet PDF下载

TE28F320图片预览
型号: TE28F320
PDF下载: 下载PDF文件 查看货源
内容描述: 3伏高级启动区块快闪记忆体 [3 Volt Advanced Boot Block Flash Memory]
分类和应用:
文件页数/大小: 58 页 / 844 K
品牌: INTEL [ INTEL ]
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28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3  
When the status register indicates that erasure is complete, check the erase status bit to verify that  
the erase operation was successful. If the erase operation was unsuccessful, SR.5 of the status  
register will be set to a “1,” indicating an erase failure. If VPP was not within acceptable limits after  
the Erase Confirm command was issued, the WSM will not execute the erase sequence; instead,  
SR.5 of the status register is set to indicate an erase error, and SR.3 is set to a “1” to identify that  
V
PP supply voltage was not within acceptable limits.  
After an erase operation, clear the status register (50H) before attempting the next operation. Any  
CUI instruction can follow after erasure is completed; however, to prevent inadvertent status  
register reads, it is advisable to place the flash in read array mode after the erase is complete.  
3.2.5.1  
Suspending and Resuming Erase  
Since an erase operation requires on the order of seconds to complete, an Erase Suspend command  
is provided to allow erase-sequence interruption in order to read data from or program data to  
another block in memory. Once the erase sequence is started, writing the Erase Suspend command  
to the CUI requests that the WSM pause the erase sequence at a predetermined point in the erase  
algorithm. The status register will indicate if/when the erase operation has been suspended.  
A Read Array/Program command can now be written to the CUI in order to read data from/  
program data to blocks other than the one currently suspended. The Program command can  
subsequently be suspended to read yet another array location. The only valid commands while  
erase is suspended are Erase Resume, Program, Read Array, Read Status Register, or Read  
Identifier. During erase suspend mode, the chip can be placed in a pseudo-standby mode by taking  
CE# to VIH. This reduces active current consumption.  
Erase Resume continues the erase sequence when CE# = VIL. As with the end of a standard erase  
operation, the status register must be read and cleared before the next instruction is issued.  
Table 6. Command Bus Definitions (1,4)  
First Bus Cycle  
Addr  
Second Bus Cycle  
Command  
Read Array  
Notes  
Oper  
Data  
Oper  
Addr  
Data  
Write  
Write  
Write  
Write  
X
X
X
X
FFH  
90H  
70H  
50H  
Read Identifier  
2
Read  
Read  
IA  
X
ID  
Read Status Register  
Clear Status Register  
SRD  
40H /  
10H  
Program  
3
Write  
X
Write  
Write  
PA  
BA  
PD  
Block Erase/Confirm  
Write  
Write  
Write  
X
X
X
20H  
B0H  
D0H  
D0H  
Program/Erase Suspend  
Program/Erase Resume  
NOTES:  
PA: Program Address  
PD: Program Data  
ID: Identifier Data  
BA: Block Address  
IA: Identifier Address  
SRD: Status Register Data  
1. Bus operations are defined in Table 3.  
2. Following the Intelligent Identifier command, two read operations access manufacturer and device codes.  
= 0 for manufacturer code, A = 1 for device code. A –A = 0.  
A
0
0
1
21  
3. Either 40H or 10H command is valid although the standard is 40H.  
4. When writing commands to the device, the upper data bus [DQ –DQ ] should be either V or V , to  
8
15  
IL  
IH  
minimize current draw.  
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13  
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