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TE28F320 参数 Datasheet PDF下载

TE28F320图片预览
型号: TE28F320
PDF下载: 下载PDF文件 查看货源
内容描述: 3伏高级启动区块快闪记忆体 [3 Volt Advanced Boot Block Flash Memory]
分类和应用:
文件页数/大小: 58 页 / 844 K
品牌: INTEL [ INTEL ]
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28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3  
When the device is in read array mode, four control signals control data output:  
WE# must be logic high (VIH)  
CE# must be logic low (VIL)  
OE# must be logic low (VIL)  
RP# must be logic high (VIH)  
In addition, the address of the desired location must be applied to the address pins. If the device is  
not in read array mode, as would be the case after a program or erase operation, the Read Array  
command (FFH) must be written to the CUI before array reads can take place.  
Table 4. Command Codes and Descriptions  
Code  
Device Mode  
Description  
00, 01,  
60, 2F,  
C0, 98  
Invalid/  
Reserved  
Unassigned commands that should not be used. Intel reserves the right to redefine these  
codes for future functions.  
FF  
Read Array  
Places the device in read array mode, such that array data will be output on the data pins.  
This is a two-cycle command. The first cycle prepares the CUI for a program operation. The  
second cycle latches addresses and data information and initiates the WSM to execute the  
Program algorithm. The flash outputs status register data when CE# or OE# is toggled. A Read  
Array command is required after programming to read array data. See Section 3.2.4.  
40  
Program Set-Up  
Alternate  
Program Set-Up  
10  
20  
(See 40H/Program Set-Up)  
Prepares the CUI for the Erase Confirm command. If the next command is not an Erase  
Confirm command, then the CUI will (a) set both SR.4 and SR.5 of the status register to a “1,”  
(b) place the device into the read status register mode, and (c) wait for another command. See  
Section 3.2.5.  
Erase Set-Up  
Erase Confirm  
If the previous command was an Erase Set-Up command, then the CUI will close the address  
and data latches, and begin erasing the block indicated on the address pins. During erase, the  
device will only respond to the Read Status Register and Erase Suspend commands. The  
device will output status register data when CE# or OE# is toggled.  
D0  
If a program or erase operation was previously suspended, this command will resume that  
operation  
Program / Erase  
Resume  
Issuing this command will begin to suspend the currently executing program/erase operation.  
The status register will indicate when the operation has been successfully suspended by  
Program / Erase setting either the program suspend (SR.2) or erase suspend (SR.6) and the WSM status bit  
B0  
70  
Suspend  
(SR.7) to a “1” (ready). The WSM will continue to idle in the SUSPEND state, regardless of the  
state of all input control pins except RP#, which will immediately shut down the WSM and the  
remainder of the chip if it is driven to V . See Section 3.2.4.1 and Section 3.2.4.1.  
IL  
This command places the device into read status register mode. Reading the device will output  
the contents of the status register, regardless of the address presented to the device. The  
device automatically enters this mode after a program or erase operation has been initiated.  
See Section 3.2.3.  
Read Status  
Register  
The WSM can set the block lock status (SR.1) , V status (SR.3), program status (SR.4), and  
erase status (SR.5) bits in the status register to “1,” but it cannot clear them to “0.” Issuing this  
command clears those bits to “0.”  
PP  
Clear Status  
Register  
50  
90  
Puts the device into the intelligent identifier read mode, so that reading the device will output  
Read Identifier  
the manufacturer and device codes (A = 0 for manufacturer, A = 1 for device, all other  
0
0
address inputs must be 0). See Section Section 3.2.2.  
NOTE: See Appendix A for mode transition information.  
10  
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