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TE28F320 参数 Datasheet PDF下载

TE28F320图片预览
型号: TE28F320
PDF下载: 下载PDF文件 查看货源
内容描述: 3伏高级启动区块快闪记忆体 [3 Volt Advanced Boot Block Flash Memory]
分类和应用:
文件页数/大小: 58 页 / 844 K
品牌: INTEL [ INTEL ]
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28F004/400B3, 28F008/800B3, 28F016/160B3, 28F320B3, 28F640B3  
3.3.2  
WP# = V for Block Unlocking  
IH  
WP# = VIH unlocks all lockable blocks.  
These blocks can now be programmed or erased.  
Note that RP# does not override WP# locking as in previous Boot Block devices. WP# controls all  
block locking and VPP provides protection against spurious writes. Table 8 defines the write  
protection methods.  
Table 8. Write Protection Truth Table for the Advanced Boot Block Flash Memory Family  
V
WP#  
RP#  
Write Protection Provided  
PP  
X
X
X
V
All Blocks Locked  
IL  
IH  
IH  
IH  
V
V
V
V
All Blocks Locked  
IL  
V  
V  
V
Lockable Blocks Locked  
All Blocks Unlocked  
PPLK  
PPLK  
IL  
V
IH  
3.4  
V
Program and Erase Voltages  
PP  
Intel® 3 Volt Advanced Boot Block products provide in-system programming and erase at 2.7 V.  
For customers requiring fast programming in their manufacturing environment, 3 Volt Advanced  
Boot Block includes an additional low-cost 12 V programming feature.  
The 12 V VPP mode enhances programming performance during the short period of time typically  
found in manufacturing processes; however, it is not intended for extended use. 12 V may be  
applied to VPP during program and erase operations for a maximum of 1000 cycles on the main  
blocks and 2500 cycles on the parameter blocks. VPP may be connected to 12 V for a total of 80  
hours maximum.  
Warning: Stressing the device beyond these limits may cause permanent damage.  
During read operations or idle times, VPP may be tied to a 5 V supply. For program and erase  
operations, a 5 V supply is not permitted. The VPP must be supplied with either 2.7 V–3.6 V or  
11.4 V–12.6 V during program and erase operations.  
3.4.1  
V
= V for Complete Protection  
PP IL  
The VPP programming voltage can be held low for complete write protection of all blocks in the  
flash device. When VPP is below VPPLK, any program or erase operation will result in a error,  
prompting the corresponding status register bit (SR.3) to be set.  
3.5  
Power Consumption  
Intel Flash devices have a tiered approach to power savings that can significantly reduce overall  
system power consumption. The Automatic Power Savings (APS) feature reduces power  
consumption when the device is selected but idle. If the CE# is deasserted, the flash enters its  
standby mode, where current consumption is even lower. The combination of these features can  
minimize memory power consumption, and therefore, overall system power consumption.  
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15  
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