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TE28F160C3BA90 参数 Datasheet PDF下载

TE28F160C3BA90图片预览
型号: TE28F160C3BA90
PDF下载: 下载PDF文件 查看货源
内容描述: 高级+引导块闪存( C3 ) [Advanced+ Boot Block Flash Memory (C3)]
分类和应用: 闪存
文件页数/大小: 68 页 / 1132 K
品牌: INTEL [ INTEL ]
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Intel Advanced+ Boot Block Flash Memory (C3)  
3.1.4  
3.1.5  
Standby  
Deselecting the device by bringing CE# to a logic-high level (V ) places the device in standby  
IH  
mode, which substantially reduces device power consumption without any latency for subsequent  
read accesses. In standby, outputs are placed in a high-impedance state independent of OE#. If  
deselected during a Program or Erase operation, the device continues to consume active power  
until the Program or Erase operation is complete.  
Reset  
From read mode, RP# at V for time t  
impedance state, and turns off all internal circuits. After return from reset, a time t  
deselects the memory, places output drivers in a high-  
IL  
PLPH  
is required  
PHQV  
until the initial read-access outputs are valid. A delay (t  
or t  
) is required after return from  
PHWL  
PHEL  
reset before a write cycle can be initiated. After this wake-up interval, normal operation is restored.  
The CUI resets to read-array mode, the status register is set to 0x80, and all blocks are locked. See  
Figure 10, “Reset Operations Waveforms” on page 48.  
If RP# is taken low for time t  
during a Program or Erase operation, the operation will be  
PLPH  
aborted and the memory contents at the aborted location (for a program) or block (for an erase) are  
no longer valid, since the data may be partially erased or written. The abort process goes through  
the following sequence:  
1. When RP# goes low, the device shuts down the operation in progress, a process which takes time  
t
to complete.  
PLRH  
2. After time t  
enter reset mode (if RP# is deasserted after t  
on page 48.  
, the part will either reset to read-array mode (if RP# is asserted during t  
) or  
PLRH  
PLRH  
). See Figure 10, “Reset Operations Waveforms”  
PLRH  
In both cases, after returning from an aborted operation, the relevant time t  
must be observed before a Read or Write operation is initiated, as discussed in the previous  
or t  
/t  
PHWL PHEL  
PHQV  
paragraph. However, in this case, these delays are referenced to the end of t  
RP# goes high.  
rather than when  
PLRH  
As with any automated device, it is important to assert RP# during a system reset. When the system  
comes out of reset, the processor expects to read from the flash memory. Automated flash  
memories provide status information when read during program or Block-Erase operations. If a  
CPU reset occurs with no flash memory reset, proper CPU initialization may not occur because the  
flash memory may be providing status information instead of array data. Intel® Flash memories  
allow proper CPU initialization following a system reset through the use of the RP# input. In this  
application, RP# is controlled by the same RESET# signal that resets the system CPU.  
18  
Datasheet