BYTE-WIDE SMART 5 FlashFile™ MEMORY FAMILY
E
Table 2. Bus Operations
Mode
Notes
RP#
CE#
OE#
WE# Address VPP
DQ0–7 RY/BY#
Read
1,2,3
VIH or
VHH
VIL
VIL
VIH
VIH
X
X
X
X
X
X
X
X
DOUT
High Z
High Z
X
X
X
Output Disable
Standby
3
3
4
VIH or
VHH
VIL
VIH
VIH
X
VIH or
VHH
Deep Power-Down
VIL
X
X
X
X
X
High Z
Note 5
VOH
VOH
Read Identifier Codes
VIH or
VHH
VIL
VIL
VIH
See
Figure 5
Write
3,6,7
VIH or
VHH
VIL
VIH
VIL
X
X
DIN
X
NOTES:
1. Refer to DC Characteristics. When VPP ≤ VPPLK, memory contents can be read, but not altered.
2. X can be VIL or VIH for control and address input pins and VPPLK or VPPH1/2 for VPP. See DC Characteristics for VPPLK and
PPH1/2 voltages.
3. RY/BY# is VOL when the WSM is executing internal block erase, program, or lock-bit configuration algorithms. It is V
V
OH
when the WSM is not busy, in block erase suspend mode (with program inactive), program suspend mode, or deep power-
down mode.
4. RP# at GND ± 0.2V ensures the lowest deep power-down current.
5. See Section 4.2 for read identifier code data.
6. Command writes involving block erase, program, or lock-bit configuration are reliably executed when VPP = VPPH1/2 and
V
CC = VCC1/2 (see Section 6.2 for operating conditions).
7. Refer to Table 3 for valid DIN during a write operation.
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