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RD28F1602C3B110 参数 Datasheet PDF下载

RD28F1602C3B110图片预览
型号: RD28F1602C3B110
PDF下载: 下载PDF文件 查看货源
内容描述: 3 VOLT英特尔?高级+引导?座闪存?记忆? ( C3) ?堆叠芯片? ScalPackage ? Familye [3 VOLT INTEL Advanced+BootBlock FlashMemory(C3)Stacked-ChipScalPackageFamilye]
分类和应用: 闪存存储内存集成电路静态存储器
文件页数/大小: 70 页 / 1167 K
品牌: INTEL [ INTEL ]
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3 Volt Intel® Advanced+ Boot Block Flash Memory Stacked-CSP Family  
1.0  
Introduction  
This document contains the specifications for the 3 Volt Intel® Advanced+ Boot Block Flash  
Memory (C3) Stacked-Chip Scale Package (Stacked-CSP) device. Stacked memory solutions are  
offered in the following combinations: 32-Mbit flash + 8-Mbit SRAM, 32-Mbit flash + 4-Mbit  
SRAM, 16-Mbit flash + 4-Mbit SRAM, or 16-Mbit flash memory + 2-Mbit SRAM.  
1.1  
Document Conventions  
Throughout this document, the following conventions have been adopted.  
Voltages: “2.7 V” refers to the full voltage range, 2.7 V–3.3V; 12 V refers to 11.4 V to 12.6 V  
Main block(s): 32-Kword block  
Parameter block(s): 4-Kword block  
1.2  
Product Overview  
The C3 Stacked-CSP device combines flash and SRAM into a single package, and provides secure  
low-voltage memory solutions for portable applications. This memory family combines two  
memory technologies, flash memory and SRAM, in one package. The flash memory delivers  
enhanced security features, a block locking capability that allows instant locking/unlocking of any  
flash block with zero-latency, and a 128-bit protection register that enable unique device  
identification, to meet the needs of next generation portable applications. Improved 12 V  
production programming can be used to improve factory throughput.  
Table 1. Block Organization (x16)  
Memory Device  
Kwords  
32-Mbit Flash  
2048  
1024  
128  
16-Mbit Flash  
2-Mbit SRAM  
4-Mbit SRAM  
256  
8-Mbit SRAM  
512  
NOTE: All words are 16 bits each.  
The flash memory is asymmetrically-blocked to enable system integration of code and data storage  
in a single device. Each flash block can be erased independently of the others up to 100,000 times.  
The flash has eight 8-KB parameter blocks located at either the top (denoted by -T suffix) or the  
bottom (-B suffix) of the address map in order to accommodate different microprocessor protocols  
for kernel code location. The remaining flash memory is grouped into 32-Kword main blocks. Any  
individual flash block can be locked or unlocked instantly to provide complete protection for code  
or data (see Section 5.7, “Flash Erase and Program Timings(1)” on page 31 for details).  
The flash contains both a Command User Interface (CUI) and a Write State Machine (WSM). The  
CUI serves as the interface between the microcontroller and the internal operation of the flash  
memory. The internal WSM automatically executes the algorithms and timings necessary for  
Datasheet  
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