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N28F020-150 参数 Datasheet PDF下载

N28F020-150图片预览
型号: N28F020-150
PDF下载: 下载PDF文件 查看货源
内容描述: 28F020 2048K ( 256K ×8 )的CMOS FLASH MEMORY [28F020 2048K (256K X 8) CMOS FLASH MEMORY]
分类和应用:
文件页数/大小: 38 页 / 877 K
品牌: INTEL [ INTEL ]
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E
28F020  
NOTES:  
1. Read timing characteristics during read/write operations are the same as during read-only operations. Refer to AC  
Characteristics for Read-Only Operations.  
2. Guaranteed by design.  
3. The integrated stop timer terminates the programming/erase operations, thus eliminating the need for a maximum  
specification.  
4. See High Speed AC Testing Input/Output Waveform (Figure 8) and High Speed AC Testing Load Circuit (Figure 9) for  
testing characteristics.  
5. Minimum Specification for Extended Temperature product.  
6. See Testing Input/Output Waveform (Figure 6) and AC Testing Load Circuit (Figure 7) for testing characteristics.  
4.10  
Erase and Programming Performance  
Limits  
Parameter  
Notes  
1, 3, 4  
1, 2, 4  
Min  
Typ  
2
Max  
30  
Unit  
Sec  
Sec  
Chip-Erase Time  
Chip-Program Time  
4
25  
NOTES:  
1. “Typicals” are not guaranteed, but based on a limited number of samples from production lots. Data taken at 25 °C, 12.0 V  
PP at 0 cycles.  
V
2. Minimum byte programming time excluding system overhead is 16 µsec (10 µsec program + 6 µsec write recovery), while  
maximum is 400 µsec/byte (16 µsec x 25 loops allowed by algorithm). Max chip-programming time is specified lower than  
the worst case allowed by the programming algorithm since most bytes program significantly faster than the worst case  
byte.  
3. Excludes 00H programming prior to erasure.  
4. Excludes System-Level Overhead.  
31  
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