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E28F200CVT80 参数 Datasheet PDF下载

E28F200CVT80图片预览
型号: E28F200CVT80
PDF下载: 下载PDF文件 查看货源
内容描述: 2兆位SmartVoltage引导块闪存系列 [2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY]
分类和应用: 闪存
文件页数/大小: 55 页 / 633 K
品牌: INTEL [ INTEL ]
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2-MBIT SmartVoltage BOOT BLOCK FAMILY  
E
Table 3. Bus Operations for Word-Wide Mode (BYTE# = VIH)  
Mode  
Notes  
RP#  
VIH  
VIH  
VIH  
VIL  
CE#  
VIL  
VIL  
VIH  
X
OE#  
VIL  
VIH  
X
WE#  
VIH  
VIH  
X
A9  
X
A0  
X
VPP  
X
DQ0–15  
DOUT  
Read  
1,2,3  
Output Disable  
Standby  
X
X
X
High Z  
High Z  
High Z  
0089 H  
X
X
X
Deep Power-Down  
9
4
X
X
X
X
X
Intelligent Identifier  
(Mfr)  
VIH  
VIL  
VIL  
VIH  
VID  
VIL  
X
Intelligent Identifier  
(Device)  
4,5  
VIH  
VIH  
VIL  
VIL  
VIL  
VIH  
VIH  
VIL  
VID  
X
VIH  
X
X
X
See  
Table 5  
Write  
6,7,8  
DIN  
Table 4. Bus Operations for Byte-Wide Mode (BYTE# = VIL)  
Mode  
Read  
Notes RP#  
CE#  
VIL  
OE# WE#  
A9  
X
A0  
X
A–1  
X
VPP  
X
DQ0–7 DQ8–14  
DOUT High Z  
1,2,3  
VIH  
VIH  
VIL  
VIH  
VIH  
VIH  
Output  
VIL  
X
X
X
X
High Z High Z  
Disable  
Standby  
VIH  
VIL  
VIH  
X
X
X
X
X
X
X
X
X
X
X
X
X
High Z High Z  
High Z High Z  
Deep Power-  
Down  
9
4
Intelligent  
Identifier (Mfr)  
VIH  
VIH  
VIL  
VIL  
VIL  
VIL  
VIH  
VIH  
VID  
VID  
VIL  
VIH  
X
X
X
X
89H  
High Z  
High Z  
Intelligent  
Identifier  
(Device)  
4,5  
See  
Table  
5
Write  
6,7,8  
VIH  
VIL  
VIH  
VIL  
X
X
X
X
DIN  
High Z  
NOTES:  
1. Refer to DC Characteristics.  
2. X can be VIL, VIH for control pins and addresses, VPPLK or VPPH for VPP  
.
3. See DC Characteristics for VPPLK, VPPH1, VPPH2, VHH, VID voltages.  
4. Manufacturer and device codes may also be accessed via a CUI write sequence, A –A16 = X, A1–A17 = X.  
1
5. See Table 5 for device IDs.  
6. Refer to Table 7 for valid DIN during a write operation.  
7. Command writes for block erase or word/byte program are only executed when VPP = VPPH1 or VPPH2  
8. To program or erase the boot block, hold RP# at VHH or WP# at VIH. See Section 3.4.  
9. RP# must be at GND ± 0.2 V to meet the maximum deep power-down current specified.  
.
16  
SEE NEW DESIGN RECOMMENDATIONS  
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