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E28F200CVT80 参数 Datasheet PDF下载

E28F200CVT80图片预览
型号: E28F200CVT80
PDF下载: 下载PDF文件 查看货源
内容描述: 2兆位SmartVoltage引导块闪存系列 [2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY]
分类和应用: 闪存
文件页数/大小: 55 页 / 633 K
品牌: INTEL [ INTEL ]
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E
Interface (CUI) and automated algorithms to  
simplify program and erase operations. The CUI  
allows for 100% TTL-level control inputs, fixed  
power supplies during erasure and programming,  
and maximum EPROM compatibility.  
2-MBIT SmartVoltage BOOT BLOCK FAMILY  
3.0 PRODUCT FAMILY PRINCIPLES  
OF OPERATION  
3.2  
Read Operations  
3.2.1  
READ ARRAY  
Flash memory combines EPROM functionality with  
in-circuit electrical program and erase. The boot  
When RP# transitions from VIL (reset) to VIH, the  
device will be in the read array mode and will  
respond to the read control inputs (CE#, address  
inputs, and OE#) without any commands being  
written to the CUI.  
block flash family utilizes  
a Command User  
When the device is in the read array mode, five  
control signals must be controlled to obtain data at  
the outputs.  
When VPP < VPPLK, the device will only successfully  
execute the following commands: Read Array,  
Read Status Register, Clear Status Register and  
intelligent identifier mode. The device provides  
standard EPROM read, standby and output disable  
operations. Manufacturer identification and device  
identification data can be accessed through the CUI  
or through the standard EPROM A9 high voltage  
access (VID) for PROM programming equipment.  
RP# must be logic high (VIH)  
WE# must be logic high (VIH)  
BYTE# must be logic high or logic low  
CE# must be logic low (VIL)  
OE must be logic low (VIL)  
The same EPROM read, standby and output  
disable functions are available when 5 V or 12 V is  
applied to the VPP pin. In addition, 5 V or 12 V on  
VPP allows program and erase of the device. All  
functions associated with altering memory contents:  
Program and Erase, Intelligent Identifier Read, and  
Read Status are accessed via the CUI.  
In addition, the address of the desired location must  
be applied to the address pins. Refer to Figures 15  
and 16 for the exact sequence and timing of these  
signals.  
If the device is not in read array mode, as would be  
the case after a program or erase operation, the  
Read Mode command (FFH) must be written to the  
CUI before reads can take place.  
The internal Write State Machine (WSM) completely  
automates program and erase, beginning operation  
signaled by the CUI and reporting status through  
the status register. The CUI handles the WE#  
interface to the data and address latches, as well  
as system status requests during WSM operation.  
During system design, consideration should be  
taken to ensure address and control inputs meet  
required input slew rates of <10 ns as defined in  
Figures 12 and 13.  
3.1  
Bus Operations  
Flash memory reads, erases and programs in-  
system via the local CPU. All bus cycles to or from  
the  
flash  
memory  
conform  
to  
standard  
microprocessor bus cycles. These bus operations  
are summarized in Tables 3 and 4.  
15  
SEE NEW DESIGN RECOMMENDATIONS  
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