E
SMART 5 BOOT BLOCK MEMORY FAMILY
Table 2. Pin Descriptions
Symbol
Type
Name and Function
ADDRESS INPUTS for memory addresses. Addresses are internally latched
during a write cycle.
A0–A18
INPUT
28F200: A[0–16], 28F400: A[0–17], 28F800: A[0–18], 28F004: A[0–18]
A9
INPUT
ADDRESS INPUT: When A9 is at VHH the signature mode is accessed. During
this mode, A0 decodes between the manufacturer and device IDs. When BYTE#
is at a logic low, only the lower byte of the signatures are read. DQ15/A–1 is a
don’t care in the signature mode when BYTE# is low.
DQ0–DQ7
INPUT/ DATA INPUTS/OUTPUTS: Inputs array data on the second CE# and WE# cycle
OUTPUT during a Program command. Inputs commands to the Command User Interface
when CE# and WE# are active. Data is internally latched during the write cycle.
Outputs array, intelligent identifier and status register data. The data pins float to
tri-state when the chip is de-selected or the outputs are disabled.
DQ8–DQ15
INPUT/ DATA INPUTS/OUTPUTS: Inputs array data on the second CE# and WE# cycle
OUTPUT during a Program command. Data is internally latched during the write cycle.
Outputs array data. The data pins float to tri-state when the chip is de-selected or
the outputs are disabled as in the byte-wide mode (BYTE# = “0”). In the byte-wide
mode DQ15/A–1 becomes the lowest order address for data output on DQ0–DQ7.
Not applicable to 28F004B5.
CE#
INPUT
CHIP ENABLE: Activates the device’s control logic, input buffers, decoders and
sense amplifiers. CE# is active low. CE# high de-selects the memory device and
reduces power consumption to standby levels. If CE# and RP# are high, but not
at a CMOS high level, the standby current will increase due to current flow
through the CE# and RP# input stages.
OE#
WE#
INPUT
INPUT
OUTPUT ENABLE: Enables the device’s outputs through the data buffers during
a read cycle. OE# is active low.
WRITE ENABLE: Controls writes to the command register and array blocks. WE#
is active low. Addresses and data are latched on the rising edge of the WE#
pulse.
RP#
INPUT
RESET/DEEP POWER-DOWN: Uses three voltage levels (VIL, VIH, and VHH) to
control two different functions: reset/deep power-down mode and boot block
unlocking. It is backwards-compatible with the BX/BL/BV products.
When RP# is at logic low, the device is in reset/deep power-down mode,
which puts the outputs at High-Z, resets the Write State Machine, and draws
minimum current.
When RP# is at logic high, the device is in standard operation. When RP#
transitions from logic-low to logic-high, the device defaults to the read array mode.
When RP# is at VHH, the boot block is unlocked and can be programmed or
erased. This overrides any control from the WP# input.
7
ADVANCE INFORMATION
INTEL [ INTEL ]
