Chapter 3: DC and Switching Characteristics for MAX V Devices
3–3
Operating Conditions
Programming/Erasure Specifications
Table 3–3 lists the programming/erasure specifications for the MAX V device family.
Table 3–3. Programming/Erasure Specifications for MAX V Devices
Parameter
Erase and reprogram cycles
Note to Table 3–3:
Block
Minimum
Typical
—
Maximum
1000 (1)
100
Unit
UFM
Configuration flash memory (CFM)
—
—
Cycles
Cycles
—
(1) This value applies to the commercial grade devices. For the industrial grade devices, the value is 100 cycles.
DC Electrical Characteristics
Table 3–4 lists DC electrical characteristics for the MAX V device family.
Table 3–4. DC Electrical Characteristics for MAX V Devices (Note 1) (Part 1 of 2)
Symbol
Parameter
Conditions
Minimum
Typical
Maximum
Unit
II
Input pin leakage current VI = VCCIO max to 0 V (2)
–10
—
10
µA
Tri-stated I/O pin leakage
VO = VCCIO max to 0 V (2)
current
IOZ
–10
—
25
27
25
10
µA
µA
µA
µA
5M40Z, 5M80Z, 5M160Z, and
5M240Z (Commercial grade)
(4), (5)
—
90
5M240Z (Commercial grade)
(6)
—
96
5M40Z, 5M80Z, 5M160Z, and
5M240Z (Industrial grade)
(5), (7)
VCCINT supply current
(standby) (3)
—
139
ICCSTANDBY
5M240Z (Industrial grade) (6)
—
—
27
27
152
96
µA
µA
5M570Z (Commercial grade)
(4)
5M570Z (Industrial grade) (7)
5M1270Z and 5M2210Z
VCCIO = 3.3 V
—
—
—
—
27
2
152
—
µA
mA
mV
mV
400
190
—
Hysteresis for Schmitt
trigger input (9)
VSCHMITT (8)
VCCIO = 2.5 V
—
VCCINT supply current
during power-up (10)
ICCPOWERUP
MAX V devices
—
—
40
mA
VCCIO = 3.3 V (11)
VCCIO = 2.5 V (11)
5
—
—
—
—
—
25
40
k
k
k
k
k
10
25
45
80
Value of I/O pin pull-up
resistor during user
mode and ISP
RPULLUP
V
CCIO = 1.8 V (11)
VCCIO = 1.5 V (11)
CCIO = 1.2 V (11)
60
95
V
130
May 2011 Altera Corporation
MAX V Device Handbook
INTEL [ INTEL ]
