Thermal Specifications
Table 6-10. Thermal Diode Interface
Land Name
THERMDA
THERMDC
THERMDA2
THERMDC2
.
Land Number
AL1
AK1
AJ7
AH7
Description
diode anode
diode cathode
diode anode
diode cathode
Table 6-11. Thermal Diode Parameters using Transistor Model
Symbol
I
FW
I
E
n
Q
Beta
R
T
Parameter
Forward Bias Current
Emitter Current
Transistor Ideality
-
Series Resistance
Min
5
5
0.997
0.391
2.79
Typ
-
-
1.001
-
4.52
Max
200
200
1.005
0.760
6.24
Unit
µA
µA
-
-
3, 4, 5
3, 4
3, 6
Notes
1, 2
Ω
Notes:
1.
Intel does not support or recommend operation of the thermal diode under reverse bias.
2.
Same as I
FW
in the diode model in
3.
Characterized across a temperature range of 50-80°C.
4.
Not 100% tested. Specified by design characterization.
5.
The ideality factor, n
Q
, represents the deviation from ideal transistor model behavior as exemplified by the
equation for the collector current: I
C
= I
S
* (e
qVBE/nQkT
- 1)
Where I
S
= saturation current, q = electronic charge, V
BE
= voltage across the transistor based emitter
junction (same nodes as V
D
), k = Boltzmann Constant, and T = absolute temperature (Kelvin).
6.
The series resistance, R
T
provided in
can be used for more accurate readings as needed.
Table 6-12. Parameters for Tdiode Correction Factor
Symbol
n
trim
Tdiode_Base
Parameter
Diode Ideality used to calculate
Tdiode_Offset
Typ
1.008
0
°C
Unit
Notes
1
1
Notes:
1.
See the
Dual-Core Intel
®
Xeon
®
Processor 5000 Series Thermal/Mechanical Design Guidelines
for more
information on how to use the Tdiode_Offset, Tdiode_Base and n
trim
parameters for fan speed control.
§
Dual-Core Intel® Xeon® Processor 5000 Series Datasheet
81
INTEL [ INTEL CORPORATION ]
