1-Gbit P30 Family
6.0
Electrical Specifications
6.1
DC Current Characteristics
Table 12. DC Current Characteristics (Sheet 1 of 2)
CMOS
TTL Inputs
Inputs
(V
=
CCQ
(V
=
CCQ
2.4 V - 3.6 V)
Sym
Parameter
Unit
Test Conditions
Notes
1.7 V - 3.6 V)
Typ
Max
Typ
Max
V
V
V
= V Max
CC
CC
I
Input Load Current
-
±1
-
±2
µA
µA
= V
Max
LI
CCQ
CCQ
= V
or V
SS
IN
CCQ
1
Output
V
V
V
= V Max
CC CC
I
Leakage DQ[15:0], WAIT
Current
-
±1
-
±10
= V
Max
LO
CCQ
CCQ
= V
or V
SS
IN
CCQ
64-Mbit
20
30
35
75
20
30
35
75
V
V
= V Max
CC
CC
128-Mbit
256-Mbit
512-Mbit
1-Gbit
= V
Max
CCQ
CCQ
I
,
V
Standby,
CE# = V
RST# = V
RST# = V (for I
WP# = V
CCS
CC
CCQ
55
115
230
460
55
200
400
800
µA
1,2
(for I
)
I
Power Down
CCQ
CCS
CCD
)
110
220
110
220
SS
CCD
IH
Asynchronous Single-
Word f = 5 MHz (1 CLK)
1-Word
Read
14
9
16
10
14
9
16
10
mA
mA
Page-Mode Read
Average f = 13 MHz (5 CLK)
4-Word
Read
V
= V Max
CC
CC
CE# = V
V
Read
Current
IL
CC
I
1
13
15
17
19
n/a
n/a
n/a
n/a
36
n/a
n/a
n/a
n/a
51
mA BL = 4W
mA BL = 8W
CCR
OE# = V
IH
Inputs: V or V
Synchronous Burst
f = 40 MHz
IL
IH
17
21
mA BL = 16W
mA BL = Cont.
21
26
36
51
V
V
= V
, pgm/ers in progress 1,3,4,7
, pgm/ers in progress 1,3,5,7
I
V
V
Program Current,
Erase Current
PP
PP
PPL
PPH
CCW,
CC
mA
µA
I
26
33
26
33
= V
CCE
CC
64-Mbit
128-Mbit
256-Mbit
512-Mbit
1-Gbit
20
35
20
35
V
Program
30
75
30
75
CC
I
Suspend Current,
V Erase
CC
Suspend Current
CE# = V
progress
; suspend in
CCWS,
CCQ
55
115
230
460
55
200
400
800
1,3,6
I
CCES
110
220
110
220
I
V
V
V
Standby Current,
PPS,
PP
PP
PP
I
Program Suspend Current,
Erase Suspend Current
0.2
2
5
0.2
2
5
µA
µA
V
V
= V
, suspend in progress
1,3
1,3
PPWS,
PP
PP
PPL
I
PPES
I
V
Read
15
15
≤ V
PPR
PP
CC
Datasheet
Intel StrataFlash® Embedded Memory (P30)
Order Number: 306666, Revision: 001
April 2005
31
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