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28F640P3 参数 Datasheet PDF下载

28F640P3图片预览
型号: 28F640P3
PDF下载: 下载PDF文件 查看货源
内容描述: 英特尔的StrataFlash嵌入式存储器 [Intel StrataFlash Embedded Memory]
分类和应用: 存储
文件页数/大小: 102 页 / 1616 K
品牌: INTEL [ INTEL ]
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1-Gbit P30 Family  
5.0  
Maximum Ratings and Operating Conditions  
5.1  
Absolute Maximum Ratings  
Warning:  
Stressing the device beyond the “Absolute Maximum Ratings” may cause permanent damage.  
These are stress ratings only.  
Parameter  
Maximum Rating  
–40 °C to +85 °C  
Notes  
Temperature under bias  
Storage temperature  
1
–65 °C to +125 °C  
–0.5 V to +4.1 V  
–0.2 V to +10 V  
–0.2 V to +2.5 V  
–0.2 V to +4.1 V  
100 mA  
Voltage on any signal (except VCC, VPP)  
VPP voltage  
2
2,3,4  
2
VCC voltage  
VCCQ voltage  
2
Output short circuit current  
5
Notes:  
1.  
2.  
Temperature for 1-Gbit SCSP is –30 °C to +85 °C.  
Voltages shown are specified with respect to V . Minimum DC voltage is –0.5 V on input/output  
SS  
signals and –0.2 V on V , V  
, and V . During transitions, this level may undershoot to –2.0 V for  
CC  
CCQ  
PP  
periods < 20 ns. Maximum DC voltage on V is V + 0.5 V, which, during transitions, may  
CC  
CC  
overshoot to V + 2.0 V for periods < 20 ns. Maximum DC voltage on input/output signals and V  
CC  
CCQ  
is V  
+ 0.5 V, which, during transitions, may overshoot to V  
+ 2.0 V for periods < 20 ns.  
CCQ  
CCQ  
3.  
4.  
Maximum DC voltage on V may overshoot to +11.5 V for periods < 20 ns.  
PP  
Program/erase voltage is typically 1.7 V – 2.0 V. 9.0 V can be applied for 80 hours maximum total, to  
any blocks for 1000 cycles maximum. 9.0 V program/erase voltage may reduce block cycling  
capability.  
5.  
Output shorted for no more than one second. No more than one output shorted at a time.  
Datasheet  
Intel StrataFlash® Embedded Memory (P30)  
Order Number: 306666, Revision: 001  
April 2005  
29