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28F640L18 参数 Datasheet PDF下载

28F640L18图片预览
型号: 28F640L18
PDF下载: 下载PDF文件 查看货源
内容描述: 的StrataFlash无线存储器 [StrataFlash Wireless Memory]
分类和应用: 存储无线
文件页数/大小: 106 页 / 1700 K
品牌: INTEL [ INTEL ]
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Intel StrataFlash® Wireless Memory (L18)  
14.2.2.2  
14.2.2.3  
Write to synchronous read operation transition  
W19 and W20 - tWHCV and tWHVH  
The AC parameters W19 or W20 (tWHCV-WE# High to Clock Valid, and tWHVH - WE# High to  
ADV# High) is required when transitioning from a write cycle (WE# going high) to perform a  
synchronous burst read. A delay from WE# going high to a valid clock edge or ADV# going high  
to latch a new address must be met.  
Write Operation with Clock Active  
W21 - tVHWL  
W22 - tCHWL  
The AC parameters W21 (tVHWL- ADV# High to WE# Low) and W22 (tCHWL -Clock high to  
WE# low) are required during write operations when the device is in a synchronous mode and the  
clock is active. A write bus cycle consists of two parts:  
the host provides an address to the flash device; and  
the host then provides data to the flash device.  
The flash device in turn binds the received data with the received address. When operating  
synchronously (RCR[15] = 0), the address of a write cycle may be provided to the flash by the first  
active clock edge with ADV# low, or rising edge of ADV# as long as the applicable cycle  
separation conditions are met between each cycle.  
If neither a clock edge nor a rising ADV# edge is used to provide a new address at the beginning of  
a write cycle (the clock is stopped and ADV# is low), the address may also be provided to the flash  
device by holding the address bus stable for the required amount of time (W5, tAVWH) before the  
rising WE# edge.  
Alternatively, the host may choose not to provide an address to the flash device during subsequent  
write cycles (if ADV# is high and only CE# or WE# is toggled to separate the prior cycle from the  
current write cycle). In this case, the flash device will use the most recently provided address from  
the host.  
Refer to Figure 20, “Write to Asynchronous Read Timing” on page 39, Figure 21, “Synchronous  
Read to Write Timing” on page 39, and Figure 22, “Write to Synchronous Read Timing” on  
page 40, for representation of these timings.  
14.2.3  
Read Operation During Buffered Programming  
The multi-partition architecture of the device allows background programming (or erasing) to  
occur in one partition while data reads (or code execution) take place in another partition.  
To perform a read while buffered programming operation, first issue a Buffered Program set up  
command in a partition. When a read operation occurs in the same partition after issuing a setup  
command, Status Register data will be returned, regardless of the read mode of the partition prior to  
issuing the setup command.  
Datasheet  
Intel StrataFlash® Wireless Memory (L18)  
Order Number: 251902, Revision: 009  
April 2005  
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