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28F640L18 参数 Datasheet PDF下载

28F640L18图片预览
型号: 28F640L18
PDF下载: 下载PDF文件 查看货源
内容描述: 的StrataFlash无线存储器 [StrataFlash Wireless Memory]
分类和应用: 存储无线
文件页数/大小: 106 页 / 1700 K
品牌: INTEL [ INTEL ]
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Intel StrataFlash® Wireless Memory (L18)  
During synchronous array and non-array read modes, the first word is output from the data buffer  
on the next valid CLK edge after the initial access latency delay (see Section 10.3.2, “Latency  
Count” on page 52). Subsequent data is output on valid CLK edges following a minimum delay.  
However, for a synchronous non-array read, the same word of data will be output on successive  
clock edges until the burst length requirements are satisfied.  
Figure 14Figure 16  
10.2.1  
Burst Suspend  
The Burst Suspend feature of the device can reduce or eliminate the initial access latency incurred  
when system software needs to suspend a burst sequence that is in progress in order to retrieve data  
from another device on the same system bus. The system processor can resume the burst sequence  
later. Burst suspend provides maximum benefit in non-cache systems.  
Burst accesses can be suspended during the initial access latency (before data is received) or after  
the device has output data. When a burst access is suspended, internal array sensing continues and  
any previously latched internal data is retained. A burst sequence can be suspended and resumed  
without limit as long as device operation conditions are met.  
Burst Suspend occurs when CE# is asserted, the current address has been latched (either ADV#  
rising edge or valid CLK edge), CLK is halted, and OE# is deasserted. CLK can be halted when it  
is at VIH or VIL. WAIT is in High-Z during OE# deassertion.  
To resume the burst access, OE# is reasserted, and CLK is restarted. Subsequent CLK edges  
resume the burst sequence.  
Within the device, CE# and OE# gate WAIT. Therefore, during Burst Suspend WAIT is placed in  
high-impedance state when OE# is deasserted and resumed active when OE# is re-asserted. See  
Figure 17, “Burst Suspend Timing” on page 36.  
10.3  
Read Configuration Register (RCR)  
The RCR is used to select the read mode (synchronous or asynchronous), and it defines the  
synchronous burst characteristics of the device. To modify RCR settings, use the Configure Read  
Configuration Register command (see Section 9.2, “Device Commands” on page 47).  
RCR contents can be examined using the Read Device Identifier command, and then reading from  
<partition base address> + 0x05 (see Section 15.2, “Read Device Identifier” on page 76).  
The RCR is shown in Table 10. The following sections describe each RCR bit.  
Table 10.  
Read Configuration Register Description (Sheet 1 of 2)  
Read Configuration Register (RCR)  
Data WAIT  
Hold Delay  
Burst  
Wrap  
Read  
Mode  
WAIT  
Burst  
Seq  
CLK  
RES  
Latency Count  
LC[2:0]  
RES RES  
Burst Length  
Polarity  
Edge  
RM  
15  
R
WP  
10  
DH  
9
WD  
8
BS  
7
CE  
6
R
5
R
4
BW  
3
BL[2:0]  
1
14  
13  
12  
11  
2
0
Bit  
Name  
Description  
Datasheet  
Intel StrataFlash® Wireless Memory (L18)  
Order Number: 251902, Revision: 009  
April 2005  
51