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28F320B3 参数 Datasheet PDF下载

28F320B3图片预览
型号: 28F320B3
PDF下载: 下载PDF文件 查看货源
内容描述: 智能3高级启动块4-, 8-,16- , 32兆位闪存系列 [SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY]
分类和应用: 闪存
文件页数/大小: 48 页 / 296 K
品牌: INTEL [ INTEL ]
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E
SMART 3 ADVANCED BOOT BLOCK  
A Read Array command can now be written to the  
CUI to read data from blocks other than that which  
is suspended. The only other valid commands while  
program is suspended, are Read Status Register,  
Read Identifier, and Program Resume. After the  
Program Resume command is written to the flash  
memory, the WSM will continue with the program  
process and status register bits SR.2 and SR.7 will  
automatically be cleared. After the Program  
Resume command is written, the device  
automatically outputs status register data when  
read (see Appendix F for Program Suspend and  
Resume Flowchart). VPP must remain at the same  
VPP level used for program while in program  
suspend mode. RP# must also remain at VIH.  
After an erase operation, clear the status register  
(50H) before attempting the next operation. Any  
CUI instruction can follow after erasure is  
completed; however, to prevent inadvertent status  
register reads, it is advisable to place the flash in  
read array mode after the erase is complete.  
3.2.5.1  
Suspending and Resuming Erase  
Since an erase operation requires on the order of  
seconds to complete, an Erase Suspend command  
is provided to allow erase-sequence interruption in  
order to read data from or program data to another  
block in memory. Once the erase sequence is  
started, writing the Erase Suspend command to the  
CUI requests that the WSM pause the erase  
sequence at a predetermined point in the erase  
algorithm. The status register will indicate if/when  
the erase operation has been suspended.  
3.2.5  
ERASE MODE  
To erase a block, write the Erase Set-up and Erase  
Confirm commands to the CUI, along with an  
address identifying the block to be erased. This  
address is latched internally when the Erase  
Confirm command is issued. Block erasure results  
in all bits within the block being set to “1.” Only one  
block can be erased at a time. The WSM will  
execute a sequence of internally-timed events to  
program all bits within the block to “0,” erase all bits  
within the block to “1,” then verify that all bits within  
the block are sufficiently erased. While the erase  
executes, status bit 7 is a “0.”  
A Read Array/Program command can now be  
written to the CUI in order to read data from/  
program data to blocks other than the one currently  
suspended.  
The  
Program  
command  
can  
subsequently be suspended to read yet another  
array location. The only valid commands while  
erase is suspended are Erase Resume, Program,  
Read Array, Read Status Register, or Read  
Identifier. During erase suspend mode, the chip can  
be placed in a pseudo-standby mode by taking CE#  
to VIH. This reduces active current consumption.  
When the status register indicates that erasure is  
complete, check the erase status bit to verify that  
the erase operation was successful. If the erase  
operation was unsuccessful, SR.5 of the status  
register will be set to a “1,” indicating an erase  
failure. If VPP was not within acceptable limits after  
the Erase Confirm command was issued, the WSM  
will not execute the erase sequence; instead, SR.5  
of the status register is set to indicate an erase  
error, and SR.3 is set to a “1” to identify that VPP  
supply voltage was not within acceptable limits.  
Erase Resume continues the erase sequence when  
CE# = VIL. As with the end of a standard erase  
operation, the status register must be read and  
cleared before the next instruction is issued.  
17  
PRELIMINARY  
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