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250686-007 参数 Datasheet PDF下载

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型号: 250686-007
PDF下载: 下载PDF文件 查看货源
内容描述: 移动式英特尔奔腾4处理器-M [Mobile Intel Pentium4 Processor-M]
分类和应用:
文件页数/大小: 97 页 / 4754 K
品牌: INTEL [ INTEL ]
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Thermal Specifications and Design Considerations  
and is not representative of the absolute maximum power the processor may dissipate under worst case  
conditions.  
2. Not 100% tested. These power specifications are determined by characterization of the processor currents at  
higher temperatures and extrapolating the values for the temperature indicated.  
3. The maximum junction temperature (TJ) is specified as the hottest location on the die. The thermal monitor’s  
automatic mode is used to indicate that the maximum TJ has been reached. Refer to Section 6.1.1 for TJ  
measurement guidelines (Refer to Section 6.1.2 for thermal monitor details).  
6.1  
Thermal Specifications  
6.1.1  
Thermal Diode  
The Mobile Intel Pentium 4 Processor-M incorporates two methods of monitoring die temperature,  
the thermal monitor and the thermal diode. The thermal monitor (detailed in Section 6.1.2) must be  
used to determine when the minimum or maximum specified processor junction temperature has  
been reached. The second method, the thermal diode, can be read by an off-die analog/digital  
converter (a thermal sensor) located on the motherboard, or a stand-alone measurement kit. The  
thermal diode may be used to monitor the die temperature of the processor for thermal  
management or instrumentation purposes but cannot be used to indicate that the maximum T of  
J
the processor has been reached. Table 39 and Table 40 provide the diode interface and  
specifications.  
Note: The reading of the thermal sensor connected to the thermal diode does not reflect the temperature  
of the hottest location on the die (T ). This is due to inaccuracies in the thermal diode, on-die  
J
temperature gradients between the location of the thermal diode and the hottest location on the die,  
and time based variations in the die temperature. Time based variations can occur since the  
sampling rate of the sensor is much slower than the die level temperature changes.  
The offset between the thermal diode based temperature reading and the hottest location of the die  
(thermal monitor) may be characterized using the thermal monitor’s Automatic mode activation of  
thermal control circuit. This temperature offset must be taken into account when using the  
processor thermal diode to implement power management events.  
Table 39. Thermal Diode Interface  
Signal Name  
Pin/Ball Number  
Signal Description  
THERMDA  
THERMDC  
B3  
C4  
Thermal diode anode  
Thermal diode cathode  
Table 40. Thermal Diode Specifications  
Symbol  
Parameter  
Min  
Typ  
Max  
Unit  
Notes  
IFW  
n
Forward Bias Current  
Diode Ideality Factor  
Series Resistance  
5
300  
µA  
1
1.0012  
1.0021  
3.86  
1.0030  
2, 3, 4  
2, 3, 5  
RT  
ohms  
NOTES:  
1. Intel does not support or recommend operation of the thermal diode under reverse bias.  
2. Characterized at 100°C.  
3. Not 100% tested. Specified by design characterization.  
4. The ideality factor, n, represents the deviation from ideal diode behavior as exemplified by the diode  
equation:  
IFW=Is *(e(qVD/nkT) -1)  
90  
Mobile Intel Pentium 4 Processor-M Datasheet