Final data
SPP20N60C3, SPB20N60C3
SPI20N60C3, SPA20N60C3
V
DS
@
T
jmax
R
DS(on)
I
D
650
0.19
20.7
V
Ω
A
Cool MOS™ Power Transistor
Feature
•
New revolutionary high voltage technology
•
Worldwide best
R
DS(on)
in TO 220
P-TO220-3-31
•
Ultra low gate charge
•
Periodic avalanche rated
•
Extreme dv/dt rated
•
High peak current capability
•
Improved transconductance
•
P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type
SPP20N60C3
SPB20N60C3
SPI20N60C3
SPA20N60C3
Maximum Ratings
Parameter
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
P-TO220-3-31
1
2
3
P-TO262-3-1
P-TO263-3-2
P-TO220-3-1
Package
P-TO220-3-1
P-TO263-3-2
P-TO262-3-1
Ordering Code
Q67040-S4398
Q67040-S4397
Q67040-S4550
Marking
20N60C3
20N60C3
20N60C3
20N60C3
P-TO220-3-31 Q67040-S4410
Symbol
I
D
20.7
13.1
I
D puls
E
AS
E
AR
I
AR
V
GS
V
GS
P
tot
T
j ,
T
stg
62.1
690
1
20
±20
±30
208
Value
SPP_B
SPP_B_I
SPA
Unit
A
20.7
1)
13.1
1)
62.1
690
1
20
±20
±30
34.5
W
°C
A
V
A
mJ
Pulsed drain current,
t
p
limited by
T
jmax
Avalanche energy, single pulse
I
D
=10A,
V
DD
=50V
Avalanche energy, repetitive
t
AR
limited by
T
jmax
2)
I
D
=20A,
V
DD
=50V
Avalanche current, repetitive
t
AR
limited by
T
jmax
Gate source voltage static
Gate source voltage AC (f >1Hz)
Power dissipation,
T
C
= 25°C
Operating and storage temperature
-55...+150
Page 1
2003-10-08
INFINEON [ INFINEON TECHNOLOGIES AG ]
