欢迎访问ic37.com |
会员登录 免费注册
发布采购

SPP20N60C3 参数 Datasheet PDF下载

SPP20N60C3图片预览
型号: SPP20N60C3
PDF下载: 下载PDF文件 查看货源
内容描述: 酷MOS ™功率晶体管 [Cool MOS™ Power Transistor]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲PC局域网
文件页数/大小: 14 页 / 314 K
品牌: INFINEON [ INFINEON TECHNOLOGIES AG ]
 浏览型号SPP20N60C3的Datasheet PDF文件第5页浏览型号SPP20N60C3的Datasheet PDF文件第6页浏览型号SPP20N60C3的Datasheet PDF文件第7页浏览型号SPP20N60C3的Datasheet PDF文件第8页浏览型号SPP20N60C3的Datasheet PDF文件第10页浏览型号SPP20N60C3的Datasheet PDF文件第11页浏览型号SPP20N60C3的Datasheet PDF文件第12页浏览型号SPP20N60C3的Datasheet PDF文件第13页  
Final data
17 Typ. drain source voltage slope
dv/dt
= f(R
G
), inductive load,
T
j
= 125°C
par.:
V
DS
=380V,
V
GS
=0/+13V,
I
D
=20.7A
150
SPP20N60C3, SPB20N60C3
SPI20N60C3, SPA20N60C3
18 Typ. switching losses
E
=
f
(I
D
), inductive load,
T
j
=125°C
par.:
V
DS
=380V,
V
GS
=0/+13V,
R
G
=3.6Ω
0.08
V/ns
mWs
dv/dt(off)
*) Eon includes SPD06S60 diode
commutation losses
0.06
dv/dt
100
E
0.05
Eoff
75
0.04
0.03
50
dv/dt(on)
Eon*
0.02
25
0.01
0
0
5
10
15
20
25
30
40
R
G
0
0
3
6
9
12
15
A
I
D
21
19 Typ. switching losses
E
=
f(R
G
), inductive load,
T
j
=125°C
par.:
V
DS
=380V,
V
GS
=0/+13V,
I
D
=20.7A
0.4
20 Avalanche SOA
I
AR
=
f
(t
AR
)
par.:
T
j
150 °C
20
mWs
*) Eon includes SPD06S60 diode
commutation losses
0.3
A
I
AR
Eoff
E
0.25
Tj(Start)=25°C
0.2
Eon*
10
0.15
5
Tj(Start)=125°C
0.1
0.05
0
0
5
10
15
20
25
30
40
R
G
0
-3
10
10
-2
10
-1
10
0
10
1
10
2
µs
10
t
AR
4
Page 9
2003-10-08