Final data
13 Forward characteristics of body diode
I
F
=
f
(V
SD
)
parameter:
T
j , t
p
= 10 µs
10
2
SPP20N60C3
SPP20N60C3, SPB20N60C3
SPI20N60C3, SPA20N60C3
14 Typ. switching time
t
=
f
(I
D
), inductive load,
T
j
=125°C
par.:
V
DS
=380V,
V
GS
=0/+13V,
R
G
=3.6Ω
10
2
td(off)
A
ns
10
1
I
F
t
10
1
tf
td(on)
10
0
T
j
= 25 °C typ
T
j
= 150 °C typ
T
j
= 25 °C (98%)
T
j
= 150 °C (98%)
10
-1
0
0.4
0.8
1.2
1.6
2
2.4
V
3
10
0
0
4
8
12
16
tr
A
I
D
24
V
SD
15 Typ. switching time
t
=
f
(R
G
), inductive load,
T
j
=125°C
par.:
V
DS
=380V,
V
GS
=0/+13V,
I
D
=20.7 A
10
3
16 Typ. drain current slope
di/dt
= f(R
G
), inductive load,
T
j
= 125°C
par.:
V
DS
=380V,
V
GS
=0/+13V,
I
D
=20.7A
5000
ns
td(off)
A/µs
4000
di/dt
td(on)
10
2
3500
3000
di/dt(on)
t
2500
2000
10
1
1500
1000
tr
tf
10
0
0
5
10
15
20
25
30
40
Ω
R
G
di/dt(off)
500
0
0
5
10
15
20
25
30
40
Ω
R
G
Page 8
2003-10-08