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SPP20N60C3XK 参数 Datasheet PDF下载

SPP20N60C3XK图片预览
型号: SPP20N60C3XK
PDF下载: 下载PDF文件 查看货源
内容描述: [Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN]
分类和应用: 晶体晶体管功率场效应晶体管开关脉冲PC局域网
文件页数/大小: 14 页 / 314 K
品牌: INFINEON [ INFINEON TECHNOLOGIES AG ]
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Final data
Electrical Characteristics
Parameter
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Symbol
g
fs
C
iss
C
oss
C
rss
V
GS
=0V,
V
DS
=0V to 480V
SPP20N60C3, SPB20N60C3
SPI20N60C3, SPA20N60C3
Conditions
min.
V
DS
≥2*I
D
*R
DS(on)max
,
I
D
=13.1A
V
GS
=0V,
V
DS
=25V,
f=1MHz
Values
typ.
17.5
2400
780
50
83
160
10
max.
-
-
-
-
-
-
-
-
-
-
-
-
-
Unit
S
pF
Effective output capacitance,
5)
C
o(er)
energy related
Effective output capacitance,
6)
C
o(tr)
time related
Turn-on delay time
t
d(on)
V
DD
=380V,
V
GS
=0/13V,
I
D
=20.7A,
R
G
=3.6Ω,
T
j
=125
-
ns
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
t
r
t
d(off)
t
f
V
DD
=380V,
V
GS
=0/13V,
I
D
=20.7A,
R
G
=3.6Ω
-
-
-
5
67
4.5
-
100
12
Q
gs
Q
gd
Q
g
V
DD
=480V,
I
D
=20.7A
-
-
-
-
11
33
87
5.5
-
-
114
-
nC
V
DD
=480V,
I
D
=20.7A,
V
GS
=0 to 10V
V
(plateau)
V
DD
=480V,
I
D
=20.7A
V
1Limited only by maximum temperature
2Repetitve avalanche causes additional power losses that can be calculated as
P
AV
=E
AR
*f.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4Soldering temperature for TO-263: 220°C, reflow
5
C
o(er)
is a fixed capacitance that gives the same stored energy as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS
.
6
C
o(tr)
is a fixed capacitance that gives the same charging time as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS
.
Page 3
2003-10-08