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S29GL128P90TFIR10 参数 Datasheet PDF下载

S29GL128P90TFIR10图片预览
型号: S29GL128P90TFIR10
PDF下载: 下载PDF文件 查看货源
内容描述: [High Performance Page Mode]
分类和应用: PC光电二极管内存集成电路闪存
文件页数/大小: 82 页 / 904 K
品牌: INFINEON [ Infineon ]
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S29GL01GP  
S29GL512P  
S29GL256P  
S29GL128P  
Just prior to the completion of an Embedded Program or Erase operation, DQ7 may change asynchronously with DQ6-DQ0 while  
Output Enable (OE#) is asserted low. That is, the device may change from providing status information to valid data on DQ7.  
Depending on when the system samples the DQ7 output, it may read the status or valid data. Even if the device has completed the  
program or erase operation and DQ7 has valid data, the data outputs on DQ6-DQ0 may be still invalid. Valid data on DQ7-D00  
appears on successive read cycles.  
See the following for more information: Table , shows the outputs for Data# Polling on DQ7. Figure 7.4, shows the Data# Polling  
algorithm; and Figure 11.7, shows the Data# Polling timing diagram.  
Figure 7.4 Write Operation Status Flowchart  
START  
- DQ 6 toggles when programming  
- DQ 6 and DQ 2 toggle when erasing  
- DQ 2 toggles when erase suspend  
- DQ 1 set when program error  
Read_1  
- DQ 5 set when time out  
Read_2  
Read_3  
DQ6 Toggles between  
Read_1 & Read_2  
and  
Read_1  
Read_2  
NO  
Read_2 & Read_3  
YES  
NO  
WriteBuffer  
program and  
Read_1 DQ1 is  
set  
RETURN  
WRITE ABORT  
RETURN  
DONE  
YES  
DQ2 Toggles  
NO  
NO  
YES  
Read_1 DQ5 is  
set  
RETURN  
TIME OUT  
YES  
RETURN  
SUSPEND  
Document Number: 002-00886 Rev. *B  
Page 32 of 83  
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