IKFW60N60DH3E
TRENCHSTOPTMꢀAdvancedꢀIsolation
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
68
-
-
-
ns
µC
A
Tvjꢀ=ꢀ25°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ25.0A,
diF/dtꢀ=ꢀ1000A/µs
Qrr
0.55
12.0
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-834
-
A/µs
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad
Value
Parameter
Symbol Conditions
Unit
min. typ. max.
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ175°C
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
-
-
-
23
37
-
-
-
-
-
-
-
ns
ns
Tvjꢀ=ꢀ175°C,
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ50.0A,
VGEꢀ=ꢀ0.0/15.0V,
RG(on)ꢀ=ꢀ7.0Ω,ꢀRG(off)ꢀ=ꢀ7.0Ω,
Lσꢀ=ꢀ75nH,ꢀCσꢀ=ꢀ30pF
Lσ,ꢀCσꢀfromꢀFig.ꢀE
Energy losses include “tail” and
diode reverse recovery.
Turn-off delay time
Fall time
198
21
ns
ns
Turn-on energy
Eon
Eoff
Ets
2.18
0.95
3.13
mJ
mJ
mJ
Turn-off energy
Total switching energy
Diode reverse recovery time
Diode reverse recovery charge
trr
-
-
-
104
1.43
19.8
-
-
-
ns
µC
A
Tvjꢀ=ꢀ175°C,
VRꢀ=ꢀ400V,
IFꢀ=ꢀ25.0A,
Qrr
Diode peak reverse recovery current Irrm
diF/dtꢀ=ꢀ1000A/µs
Diode peak rate of fall of reverse
recoveryꢀcurrentꢀduringꢀtb
dirr/dt
-
-637
-
A/µs
Datasheet
5
Vꢀ2.1
2017-09-21
INFINEON [ Infineon ]
