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IKFW60N60DH3E 参数 Datasheet PDF下载

IKFW60N60DH3E图片预览
型号: IKFW60N60DH3E
PDF下载: 下载PDF文件 查看货源
内容描述: [IGBT HighSpeed 3]
分类和应用: 双极性晶体管
文件页数/大小: 16 页 / 2002 K
品牌: INFINEON [ Infineon ]
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IKFW60N60DH3E  
TRENCHSTOPTMꢀAdvancedꢀIsolation  
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  
Value  
Parameter  
Symbol Conditions  
Unit  
min. typ. max.  
StaticꢀCharacteristic  
Collector-emitter breakdown voltage V(BR)CES VGEꢀ=ꢀ0V,ꢀICꢀ=ꢀ0.50mA  
VGEꢀ=ꢀ15.0V,ꢀICꢀ=ꢀ50.0A  
600  
-
-
V
V
Collector-emitter saturation voltage VCEsat  
Tvjꢀ=ꢀ25°C  
-
-
2.20 2.70  
2.80  
Tvjꢀ=ꢀ175°C  
-
VGEꢀ=ꢀ0V,ꢀIFꢀ=ꢀ25.0A  
Tvjꢀ=ꢀ25°C  
Tvjꢀ=ꢀ175°C  
Diode forward voltage  
VF  
-
-
1.50 1.90  
V
V
1.45  
-
Gate-emitter threshold voltage  
VGE(th)  
ICꢀ=ꢀ0.58mA,ꢀVCEꢀ=ꢀVGE  
4.1  
5.1  
5.7  
VCEꢀ=ꢀ600V,ꢀVGEꢀ=ꢀ0V  
Tvjꢀ=ꢀ25°C  
Tvjꢀ=ꢀ175°C  
Zero gate voltage collector current ICES  
-
-
-
40  
-
µA  
600  
Gate-emitter leakage current  
Transconductance  
IGES  
gfs  
VCEꢀ=ꢀ0V,ꢀVGEꢀ=ꢀ20V  
VCEꢀ=ꢀ20V,ꢀICꢀ=ꢀ50.0A  
-
-
-
100  
-
nA  
S
19.0  
ElectricalꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  
Value  
Parameter  
Symbol Conditions  
Unit  
min. typ. max.  
DynamicꢀCharacteristic  
Input capacitance  
Cies  
-
-
-
2301  
98  
-
-
-
Output capacitance  
Coes  
Cres  
VCEꢀ=ꢀ25V,ꢀVGEꢀ=ꢀ0V,ꢀfꢀ=ꢀ1MHz  
pF  
Reverse transfer capacitance  
67  
VCCꢀ=ꢀ480V,ꢀICꢀ=ꢀ50.0A,  
VGEꢀ=ꢀ15V  
Gate charge  
QG  
LE  
-
-
210.0  
13.0  
-
-
nC  
nH  
Internal emitter inductance  
measured 5mm (0.197 in.) from  
case  
Short circuit collector current  
Max. 1000 short circuits  
Time between short circuits: 1.0s  
VGEꢀ=ꢀ15.0V,ꢀVCCꢀ400V,  
tSCꢀ5µs  
Tvjꢀ=ꢀ150°C  
IC(SC)  
-
-
A
245  
SwitchingꢀCharacteristic,ꢀInductiveꢀLoad  
Value  
Parameter  
Symbol Conditions  
Unit  
min. typ. max.  
IGBTꢀCharacteristic,ꢀatꢀTvjꢀ=ꢀ25°C  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
-
-
-
23  
39  
-
-
-
-
-
-
-
ns  
ns  
Tvjꢀ=ꢀ25°C,  
VCCꢀ=ꢀ400V,ꢀICꢀ=ꢀ50.0A,  
VGEꢀ=ꢀ0.0/15.0V,  
RG(on)ꢀ=ꢀ7.0,ꢀRG(off)ꢀ=ꢀ7.0,  
Lσꢀ=ꢀ75nH,ꢀCσꢀ=ꢀ30pF  
Lσ,ꢀCσꢀfromꢀFig.ꢀE  
Energy losses include “tail” and  
diode reverse recovery.  
Turn-off delay time  
Fall time  
170  
19  
ns  
ns  
Turn-on energy  
Eon  
Eoff  
Ets  
1.57  
0.72  
2.29  
mJ  
mJ  
mJ  
Turn-off energy  
Total switching energy  
Datasheet  
4
Vꢀ2.1  
2017-09-21  
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