欢迎访问ic37.com |
会员登录 免费注册
发布采购

IKFW60N60DH3E 参数 Datasheet PDF下载

IKFW60N60DH3E图片预览
型号: IKFW60N60DH3E
PDF下载: 下载PDF文件 查看货源
内容描述: [IGBT HighSpeed 3]
分类和应用: 双极性晶体管
文件页数/大小: 16 页 / 2002 K
品牌: INFINEON [ Infineon ]
 浏览型号IKFW60N60DH3E的Datasheet PDF文件第1页浏览型号IKFW60N60DH3E的Datasheet PDF文件第2页浏览型号IKFW60N60DH3E的Datasheet PDF文件第4页浏览型号IKFW60N60DH3E的Datasheet PDF文件第5页浏览型号IKFW60N60DH3E的Datasheet PDF文件第6页浏览型号IKFW60N60DH3E的Datasheet PDF文件第7页浏览型号IKFW60N60DH3E的Datasheet PDF文件第8页浏览型号IKFW60N60DH3E的Datasheet PDF文件第9页  
IKFW60N60DH3E  
TRENCHSTOPTMꢀAdvancedꢀIsolation  
MaximumꢀRatings  
Forꢀoptimumꢀlifetimeꢀandꢀreliability,ꢀInfineonꢀrecommendsꢀoperatingꢀconditionsꢀthatꢀdoꢀnotꢀexceedꢀ80%ꢀofꢀtheꢀmaximumꢀratingsꢀstatedꢀinꢀthisꢀdatasheet.  
Parameter  
Symbol  
Value  
Unit  
Collector-emitterꢀvoltage,ꢀTvjꢀ25°C  
VCE  
600  
V
DCꢀcollectorꢀcurrent,ꢀlimitedꢀbyꢀTvjmax  
Thꢀ=ꢀ25°C  
Thꢀ=ꢀ65°C  
Thꢀ=ꢀ65°C  
53.0  
44.0  
IC  
A
74.01)  
Pulsedꢀcollectorꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax  
ICpuls  
150.0  
150.0  
A
A
Turn off safe operating area  
VCEꢀ600V,ꢀTvjꢀ175°C,ꢀtpꢀ=ꢀ1µs  
-
Diodeꢀforwardꢀcurrent,ꢀlimitedꢀbyꢀTvjmax  
Thꢀ=ꢀ25°Cꢀvalueꢀlimitedꢀbyꢀbondwire  
Thꢀ=ꢀ65°C  
IF  
40.0  
32.0  
A
Diodeꢀpulsedꢀcurrent,ꢀtpꢀlimitedꢀbyꢀTvjmax  
IFpuls  
VGE  
150.0  
A
V
Gate-emitter voltage  
TransientꢀGate-emitterꢀvoltageꢀ(tpꢀ10µs,ꢀDꢀ<ꢀ0.010)  
±20  
±30  
Short circuit withstand time  
VGEꢀ=ꢀ15.0V,ꢀVCCꢀ400V  
Allowed number of short circuits < 1000  
Time between short circuits: 1.0s  
Tvjꢀ=ꢀ150°C  
tSC  
µs  
5
PowerꢀdissipationꢀThꢀ=ꢀ25°C  
PowerꢀdissipationꢀThꢀ=ꢀ65°C  
141.0  
104.0  
Ptot  
W
Operating junction temperature  
Storage temperature  
Tvj  
-40...+175  
-55...+150  
°C  
°C  
Tstg  
Soldering temperature,  
wave soldering 1.6mm (0.063in.) from case for 10s  
°C  
260  
0.6  
Mounting torque, M3 screw  
Maximum of mounting processes: 3  
IsolationꢀvoltageꢀRMS,ꢀfꢀ=ꢀ50/60Hz,ꢀtꢀ=ꢀ1min2)  
M
Nm  
V
Visol  
2500  
ThermalꢀResistance  
Value  
min. typ. max.  
Parameter  
Symbol Conditions  
Unit  
RthꢀCharacteristics  
IGBT thermal resistance,3)  
junction - heatsink  
Diode thermal resistance,3)  
junction - heatsink  
Rth(j-h)  
Rth(j-h)  
Rth(j-a)  
-
-
-
0.90 1.06 K/W  
1.75 1.96 K/W  
Thermal resistance  
junction - ambient  
-
65 K/W  
1) Equivalent current rating in TO-247-3 at Th = 65°C using reference insulation material: 152µm, 0.9 W/mK, standard polyimide based reinforced carrier  
insulator  
2) For a proper handling and assembly of the advanced isolation device in the application refer to the note at the package drawing.  
3) At force on body F = 500N, Ta = 25ºC  
Datasheet  
3
Vꢀ2.1  
2017-09-21  
 复制成功!