Technische Information / technical information
IGBT-Module
IGBT-modules
FF600R12IP4
Vorläufige Daten
preliminary data
Schaltverluste IGBT-Wechselr. (typisch)
switching losses IGBT-Inverter (typical)
EÓÒ = f (R•), EÓËË = f (R•)
Transienter Wärmewiderstand IGBT-Wechselr.
transient thermal impedance IGBT-inverter
ZÚÌœ† = f (t)
V•Š = ±15 V, I† = 600 A, V†Š = 600 V
180
100
EÓÒ, TÝÎ = 125°C
EÓÒ, TÝÎ = 150°C
EÓËË, TÝÎ = 125°C
ZÚÌœ† : IGBT
160
EÓËË, TÝÎ = 150°C
140
10
120
100
80
1
i:
rÍ[K/kW]: 1,8
1
2
9,1
3
30,5 3,6
4
60
τÍ[s]:
0,0008 0,013 0,05 0,6
40
0,1
0,001
1,0
2,0
3,0
4,0
R• [Â]
5,0
6,0
0,01
0,1
t [s]
1
10
Sicherer Rückwärts-Arbeitsbereich IGBT-Wr. (RBSOA)
reverse bias safe operating area IGBT-inv. (RBSOA)
I† = f (V†Š)
Durchlasskennlinie der Diode-Wechselr. (typisch)
forward characteristic of diode-inverter (typical)
IŒ = f (VŒ)
V•Š = ±15 V, R•ÓËË = 2.2 Â, TÝÎ = 150°C
2000
1200
I†, Modul
I†, Chip
TÝÎ = 25°C
TÝÎ = 125°C
TÝÎ = 150°C
1800
1080
1600
1400
1200
1000
800
600
400
200
0
960
840
720
600
480
360
240
120
0
0
200
400
600 800
V†Š [V]
1000 1200 1400
0,0
0,5
1,0
1,5
VΠ[V]
2,0
2,5
3,0
prepared by: AC
approved by: MS
date of publication: 2009-08-13
revision: 2.4
6
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