Technische Information / technical information
IGBT-Module
IGBT-modules
FF600R12IP4
Vorläufige Daten
preliminary data
IGBT-Wechselrichter / IGBT-inverter
Höchstzulässige Werte / maximum rated values
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
TÝÎ = 25°C
V†Š»
1200
600
V
A
Kollektor-Dauergleichstrom
T† = 100°C, TÝÎ = 175°C
DC-collector current
I† ÒÓÑ
I†ç¢
PÚÓÚ
Periodischer Kollektor Spitzenstrom
t« = 1 ms
1200
3,35
+/-20
A
repetitive peak collector current
Gesamt-Verlustleistung
T† = 25°C, TÝÎ = 175°C
total power dissipation
kW
V
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
V•Š»
Charakteristische Werte / characteristic values
min. typ. max.
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
I† = 600 A, V•Š = 15 V
I† = 600 A, V•Š = 15 V
I† = 600 A, V•Š = 15 V
TÝÎ = 25°C
TÝÎ = 125°C V†Š ÙÈÚ
TÝÎ = 150°C
1,70 2,05
2,00
2,10
V
V
V
Gate-Schwellenspannung
gate threshold voltage
I† = 23,0 mA, V†Š = V•Š, TÝÎ = 25°C
V•Š = -15 V ... +15 V
V•ŠÚÌ
Q•
5,0
5,8
4,40
1,8
6,5
V
µC
Â
Gateladung
gate charge
Interner Gatewiderstand
internal gate resistor
TÝÎ = 25°C
R•ÍÒÚ
CÍþÙ
CØþÙ
I†Š»
I•Š»
Eingangskapazität
input capacitance
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V
f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V
V†Š = 1200 V, V•Š = 0 V, TÝÎ = 25°C
V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C
37,0
2,05
nF
nF
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
5,0 mA
400 nA
Gate-Emitter Reststrom
gate-emitter leakage current
Einschaltverzögerungszeit (ind. Last)
turn-on delay time (inductive load)
I† = 600 A, V†Š = 600 V
V•Š = ±15 V
R•ÓÒ = 2,2 Â
TÝÎ = 25°C
tÁ ÓÒ
0,21
0,24
0,24
µs
µs
µs
TÝÎ = 125°C
TÝÎ = 150°C
Anstiegszeit (induktive Last)
rise time (inductive load)
I† = 600 A, V†Š = 600 V
V•Š = ±15 V
R•ÓÒ = 2,2 Â
TÝÎ = 25°C
tØ
0,12
0,12
0,13
µs
µs
µs
TÝÎ = 125°C
TÝÎ = 150°C
Abschaltverzögerungszeit (ind. Last)
turn-off delay time (inductive load)
I† = 600 A, V†Š = 600 V
V•Š = ±15 V
R•ÓËË = 2,2 Â
TÝÎ = 25°C
tÁ ÓËË
0,70
0,80
0,85
µs
µs
µs
TÝÎ = 125°C
TÝÎ = 150°C
Fallzeit (induktive Last)
fall time (inductive load)
I† = 600 A, V†Š = 600 V
V•Š = ±15 V
R•ÓËË = 2,2 Â
TÝÎ = 25°C
tË
0,15
0,20
0,20
µs
µs
µs
TÝÎ = 125°C
TÝÎ = 150°C
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
I† = 600 A, V†Š = 600 V, L» = 45 nH TÝÎ = 25°C
V•Š = ±15 V, di/dt = 3800 A/µs (TÝÎ=150°C) TÝÎ = 125°C
52,0
77,0
83,0
mJ
mJ
mJ
EÓÒ
EÓËË
R•ÓÒ = 2,2 Â
TÝÎ = 150°C
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
I† = 600 A, V†Š = 600 V, L» = 45 nH TÝÎ = 25°C
V•Š = ±15 V, du/dt = 3100 V/µs (TÝÎ=150°C) TÝÎ = 125°C
81,0
105
115
mJ
mJ
mJ
R•ÓËË = 2,2 Â
TÝÎ = 150°C
Kurzschlussverhalten
SC data
V•Š ù 15 V, V†† = 800 V
V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt
IȠ
t« ù 10 µs, TÝÎ = 150°C
2400
A
Innerer Wärmewiderstand
thermal resistance, junction to case
pro IGBT / per IGBT
pro IGBT / per IGBT
ð«ÈÙÚþ = 1 W/(m·K)
RÚÌœ†
RÚ̆™
45,0 K/kW
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
14,0
K/kW
/
ðÃØþÈÙþ = 1 W/(m·K)
prepared by: AC
approved by: MS
date of publication: 2009-08-13
revision: 2.4
2
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