BTS 432 E2
Electrical Characteristics
Parameter and Conditions
Symbol
Values
Unit
at Tj = 25 °C, V = 12 V unless otherwise specified
bb
min
--
typ
max
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to 5)
IL = 2 A
T=25 °C: RON
j
30
55
11
38
70
--
mΩ
A
T=150 °C:
j
Nominal load current (pin 3 to 5)
IL(ISO)
9
ISO Proposal: VON = 0.5 V, T = 85 °C
C
Output current (pin 5) while GND disconnected or
GND pulled up, VIN= 0, see diagram page 7,
IL(GNDhigh)
--
--
1
mA
T =-40...+150°C
j
Turn-on time
Turn-off time
to 90% VOUT: ton
to 10% VOUT: toff
50
10
160
--
300
80
µs
RL = 12 Ω, T =-40...+150°C
j
Slew rate on
10 to 30% VOUT, RL = 12 Ω, T =-40...+150°C
dV /dton
-dV/dtoff
0.4
1
--
--
2.5 V/µs
5 V/µs
j
Slew rate off
70 to 40% VOUT, RL = 12 Ω, T =-40...+150°C
j
Operating Parameters
Operating voltage 5)
Undervoltage shutdown
Undervoltage restart
T =-40...+150°C: Vbb(on)
4.5
2.4
--
--
--
42
4.5
4.5
7.5
V
V
V
V
j
T =-40...+150°C: Vbb(under)
j
T =-40...+150°C: Vbb(u rst)
j
--
Undervoltage restart of charge pump
see diagram page 12
Vbb(ucp)
--
6.5
T =-40...+150°C:
j
Undervoltage hysteresis
∆Vbb(under) = Vbb(u rst) - Vbb(under)
∆Vbb(under)
--
0.2
--
V
Overvoltage shutdown
Overvoltage restart
Overvoltage hysteresis
Overvoltage protection6)
Ibb=40 mA
T =-40...+150°C: Vbb(over)
42
42
--
--
--
52
--
V
V
V
V
j
T =-40...+150°C: Vbb(o rst)
j
T =-40...+150°C: ∆Vbb(over)
j
0.2
--
67
--
T =-40°C: Vbb(AZ)
j
T =25...+150°C:
j
60
63
--
Standby current (pin 3)
VIN=0
Tj=-40...+25°C: Ibb(off)
Tj=150°C:
--
--
12
18
25
60
µA
µA
IL(off)
--
6
--
Leakage output current (included in Ibb(off)
VIN=0
Operating current (Pin 1)7), VIN=5 V
)
IGND
--
1.1
-- mA
5)
6)
At supply voltage increase up to V = 6.5 V typ without charge pump, V
≈V - 2 V
bb
bb
OUT
see also V
in table of protection functions and circuit diagram page 7. Meassured without load.
ON(CL)
7)
Add I , if I > 0, add I , if V >5.5 V
ST
ST
IN
IN
Semiconductor Group
3
INFINEON [ Infineon ]
