HITFET® BSP 75
Typ. on-state resistance
R
ON
= f (VIN)
I
D
= 0.7 A; T
j
= 25°C
R
ON
[mΩ]
2 000
Typ. current limitation
I
D(lim)
= f (Tj);
VDS=12V, V
IN
= 10V
I
D(lim)
[A]
1.5
1.4
1 500
1.3
1 000
1.2
500
1.1
0
0
2
4
6
8
10
1
-50
-25
0
25
50
75
1 00
12 5
150
VIN [V]
Typ. short circuit current
I
D(SC)
= f (VIN);
VDS=12V, T
j
= 25°C
I
D(SC)
[A]
1.6
1.4
1.2
1
0.01
Tj [°C]
Transient thermal impendance
Z
thJC
= f (tp)
Parameter: D=tp/T
Z
thJC
[K/W]
1 E+ 2
D=
0.5
0.2
1 E+ 1
0.1
0.05
0.8
0.6
1 E+ 0
0.02
0.005
P tot
tp
T
t
0.4
0.2
1E-1
0
0
0
2
4
6
8
10
1E-2
1E-6
1E-5
1E-4
1E-3
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
1E+4
VIN [V]
tp [s]
Semiconductor Group
Page 7
1998-02-04