HITFET® BSP 75
Electrical Characteristics
Parameter and Conditions
at T
j
= 25 °C, unless otherwise specified
Symbol
Values
min
typ
max
Unit
Static Characteristics
Drain source clamp voltage
I
D
= 10 mA
T
j
=-40...+150°C:
Off state drain current
V
IN
= 0 V,
V
DS
= 32 V
T
j
=-40...+150°C:
Input threshold voltage
I
D
= 10 mA
Input current
normal operation,
I
D<
I
D(lim)
:
V
IN
= 5 V
current limitation mode,
I
D
=I
D(lim)
:
after thermal shutdown,
I
D
=0 A:
On-state resistance
I
D
= 0.7 A, V
IN
= 5 V
T
j
=25°C:
T
j
=150°C:
On-state resistance
I
D
= 0.7 A, V
IN
= 10 V
T
j
=25°C:
T
j
=150°C:
Nominal load current
V
BB
= 12 V,
V
DS
= 0.5 V,
T
S
= 85°C
T
j
< 150°C
Current limit
V
IN
= 10 V,
V
DS
= 12 V
Dynamic characteristics
Turn-on time
V
IN
to 90%
I
D
:
R
L
= 22
Ω,
V
IN
= 0 to 10 V, V
bb
= 12 V
Turn-off time
V
IN
to 10%
I
D
:
R
L
= 22
Ω,
V
IN
= 10 to 0 V, V
bb
= 12 V
Slew rate on
70 to 50% V
bb
:
R
L
= 22
Ω,
V
IN
= 0 to 10 V, V
bb
= 12 V
Slew rate off
50 to 70% V
bb
:
R
L
= 22
Ω,
V
IN
= 10 to 0 V, V
bb
= 12 V
V
DS(AZ)
I
DSS
V
IN(th)
I
IN(1)
I
IN(2)
I
IN(3)
R
DS(on)
55
--
2
--
--
1000
--
--
--
--
0.7
--
--
2.5
100
200
1500
550
850
475
750
--
70
5
3
200
300
2000
675
1350
550
1000
--
V
µA
V
µA
mΩ
R
DS(on)
I
D(Nom)
mΩ
A
I
D(lim)
1
1.5
1.9
A
t
on
t
off
-d
V
DS
/dt
on
d
V
DS
/dt
off
--
--
--
--
10
10
4
4
20
20
10
10
µs
µs
V/µs
V/µs
Semiconductor Group
Page 3
1998-02-04
INFINEON [ INFINEON TECHNOLOGIES AG ]
