HITFET® BSP 75
Smart Lowside Power Switch
Features
•
Logic Level Input
•
Input protection (ESD)
•
Thermal shutdown (with restart)
•
Overload protection
•
Short circuit protection
•
Overvoltage protection
•
Current limitation
Product Summary
Continuous drain source voltage
On-state resistance
Current limitation
Nominal load current
Clamping energy
V
DS
R
DS(ON)
I
D(lim)
I
D(Nom)
E
AS
55
550
1
0.7
550
V
mΩ
A
A
mJ
Application
•
All kinds of resistive, inductive and capacitive loads in switching applications
• µC
compatible power switch for 12 V and 24 V DC applications
•
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in
Smart Power Technology.
Fully protected by embedded protection functions.
V bb
+
LOAD
M
Drain
2
Overvoltage
protection
1
IN
dv/dt
limitation
Short circuit
protection
Short circuit
Current
protection
limitation
Source
ESD
Over-
temperature
protection
3
4
®
HITFET
Pin
1
2
3
TAB
Symbol
IN
DRAIN
SOURCE
SUBSTRATE
Function
Input
Output to the load
Ground
Must be connected to Pin 3
Semiconductor Group
Page 1 of 9
1998-02-04
INFINEON [ INFINEON TECHNOLOGIES AG ]
