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IDT71V016SA12PHGI8 参数 Datasheet PDF下载

IDT71V016SA12PHGI8图片预览
型号: IDT71V016SA12PHGI8
PDF下载: 下载PDF文件 查看货源
内容描述: [Standard SRAM, 64KX16, 12ns, CMOS, PDSO44, 0.400 INCH, ROHS COMPLIANT, TSOP2-44]
分类和应用: 静态存储器光电二极管内存集成电路
文件页数/大小: 9 页 / 98 K
品牌: IDT [ INTEGRATED DEVICE TECHNOLOGY ]
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IDT71V016SA, 3.3V CMOS Static RAM  
1 Meg (64K x 16-Bit)  
Commercial and Industrial Temperature Ranges  
Absolute Maximum Ratings(1)  
Recommended Operating  
Temperature and Supply Voltage  
Symbol  
Rating  
Value  
Unit  
DD  
V
Supply Voltage Relative to  
SS  
V
–0.5 to +4.6  
V
SS  
DD  
V
Grade  
Temperature  
0°C to +70°C  
-40°C to +85°C  
V
Commercial  
Industrial  
0V  
0V  
See Below  
DD  
IN OUT  
V , V  
Terminal Voltage Relative  
SS  
to V  
–0.5 to V +0.5  
V
See Below  
3834 tbl 04  
oC  
oC  
W
BIAS  
T
Temperature Under Bias  
Storage Temperature  
Power Dissipation  
–55 to +125  
–55 to +125  
1.25  
STG  
T
Recommended DC Operating  
Conditions  
T
P
OUT  
I
DC Output Current  
50  
mA  
Symbol  
Parameter  
Supply Voltage  
Min.  
3.15  
3.0  
Typ.  
3.3  
Max.  
3.6  
Unit  
V
3834 tbl 03  
(1)  
NOTE:  
VDD  
1. StressesgreaterthanthoselistedunderABSOLUTEMAXIMUMRATINGSmaycause  
permanentdamagetothedevice.Thisisastressratingonlyandfunctionaloperation  
ofthedeviceattheseoranyotherconditionsabovethoseindicatedintheoperational  
sections of this specification is not implied. Exposure to absolute maximum rating  
conditionsforextendedperiodsmayaffectreliability.  
(2)  
VDD  
Supply Voltage  
Ground  
3.3  
3.6  
V
Vss  
VIH  
VIL  
0
0
0
V
____  
Input High Voltage  
Input Low Voltage  
2.0  
VDD+0.3(3)  
0.8  
V
–0.3(4)  
V
____  
Capacitance  
(TA = +25°C, f = 1.0MHz, SOJ package)  
3834 tbl 05  
NOTES:  
1. For 71V016SA10 only.  
2. For all speed grades except 71V016SA10.  
3. VIH (max.) = VDD+2V for pulse width less than 5ns, once per cycle.  
4. VIL (min.) = –2V for pulse width less than 5ns, once per cycle.  
Symbol  
CIN  
Parameter(1)  
Input Capacitance  
I/O Capacitance  
Conditions  
VIN = 3dV  
VOUT = 3dV  
Max. Unit  
6
7
pF  
CI/O  
pF  
3834 tbl 06  
NOTE:  
1. Thisparameterisguaranteedbydevicecharacterization,butnotproductiontested.  
DCElectrical Characteristics  
(VDD = Min. to Max., Commercial and Industrial Temperature Ranges)  
IDT71V016SA  
Symbol  
|ILI|  
Parameter  
Input Leakage Current  
Test Condition  
VDD = Max., VIN = VSS to VDD  
VDD = Max., CS = VIH, VOUT = VSS to VDD  
IOL = 8mA, VDD = Min.  
Min.  
Max.  
Unit  
µA  
µA  
V
___  
___  
___  
5
5
|ILO|  
Output Leakage Current  
Output Low Voltage  
Output High Voltage  
VOL  
0.4  
___  
VOH  
IOH = –4mA, VDD = Min.  
2.4  
V
3834 tbl 07  
DC Electrical Characteristics(1,2)  
(VDD = Min. to Max., VLC = 0.2V, VHC = VDD – 0.2V)  
71V016SA10  
71V016SA12  
71V016SA15  
71V016SA20  
Com'l Only  
160  
Com'l  
150  
Ind  
160  
--  
Com'l  
130  
Ind  
Com'l  
120  
Ind  
120  
--  
Symbol  
Parameter  
Dynamic Operating Current  
Unit  
Max.  
130  
--  
mA  
CC  
I
(3)  
(3)  
Typ.(4)  
125  
120  
110  
110  
LC  
DD  
MAX  
CS V , Outputs Open, V = Max., f = f  
Dynamic Standby Power Supply Current  
mA  
SB  
I
45  
10  
40  
10  
45  
10  
35  
10  
35  
10  
30  
10  
30  
10  
HC  
DD  
MAX  
CS V , Outputs Open, V = Max., f = f  
Full Standby Power Supply Current (static)  
mA  
SB1  
I
(3)  
HC  
DD  
CS V , Outputs Open, V = Max., f = 0  
NOTES:  
3834 tbl 08  
1. Allvaluesaremaximumguaranteedvalues.  
2. All inputs switch between 0.2V (Low) and VDD – 0.2V (High).  
3. fMAX = 1/tRC (all address inputs are cycling at fMAX); f = 0 means no address input lines are changing .  
4. Typical values are measured at 3.3V, 25°C and with equal read and write cycles.  
6.42  
3