IDT6116SA/LA
CMOS STATIC RAM 16K (2K x 8-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
AC ELECTRICAL CHARACTERISTICS (VCC = 5V ± 10%, All Temperature Ranges)
6116SA15(1)
6116LA15(1)
6116SA20
6116SA25
6116SA35
6116LA35
6116LA20
6116LA25
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Min.
Max.
Unit
WRITE CYCLE
tWC
tCW
Write Cycle Time
15
13
—
—
20
15
—
—
25
17
—
—
35
25
—
—
ns
ns
Chip Select to End-of-
Write
tAW
Address Valid to End-
of-Write
14
—
15
—
17
—
25
—
ns
tAS
Address Set-up Time
Write Pulse Width
0
12
0
—
—
—
7
0
12
0
—
—
—
8
0
15
0
—
—
—
16
0
20
0
—
—
—
20
ns
ns
ns
ns
tWP
tWR
tWHZ
Write Recovery Time
(3)
Write to Output
in High-Z
—
—
—
—
tDW
Data to Write Time
Overlap
12
0
—
—
—
12
0
—
—
—
13
0
—
—
—
15
0
—
—
—
ns
ns
(4)
tDH
Data Hold from Write
Time
(3,4)
tOW
Output Active from
End-of-Write
0
0
0
0
ns
3089 tbl 14
AC ELECTRICAL CHARACTERISTICS (VCC = 5V ± 10%, All Temperature Ranges)
6116SA45
6116LA45
6116SA55(2) 6116SA70(2) 6116SA90(2) 6116SA120(2) 6116SA150(2)
6116LA55(2) 6116LA70(2) 6116LA90(2) 6116LA120(2) 6116LA150(2)
Symbol
Parameter
Min.
Max. Min.
Max. Min. Max.
Min. Max. Min. Max.
Min. Max. Unit
WRITE CYCLE
tWC
tCW
Write Cycle Time
45
—
—
55
40
—
—
70
40
—
—
90
55
—
—
120
70
—
—
150
90
—
—
ns
ns
Chip Select to End of
Write
30
tAW
Address Valid to End
of Write
30
—
45
—
65
—
80
—
105
—
120
—
ns
tAS
Address Set-up Time
Write Pulse Width
0
25
0
—
—
—
25
5
40
5
—
—
—
30
15
40
5
—
—
—
35
15
55
5
—
—
—
40
20
70
5
—
—
—
40
20
90
10
—
—
—
—
40
ns
ns
ns
ns
tWP
tWR
tWHZ
Write Recovery Time
(3)
Write to Output
in High-Z
—
—
—
—
—
tDW
Data to Write Time
Overlap
20
0
—
—
—
25
5
—
—
—
30
5
—
—
—
30
5
—
—
—
35
5
—
—
—
40
10
0
—
—
—
ns
ns
(4)
tDH
Data Hold from Write
Time
(3,4)
tOW
Output Active from
End of Write
0
0
0
0
0
ns
NOTES:
1. 0°C to +70°C temperature range only.
2. –55°C to +125°C temperature range only.
3. This parameter guaranteed with AC Load (Figure 2) by device characterization, but is not production tested.
3089 tbl 15
4. The specification for tDH must be met by the device supplying write data to the RAM under all operation conditions. Although tDH and tOW values will vary
over voltage and temperature, the actual tDH will always be smaller than the actual tOW.
5.1
8
IDT [ INTEGRATED DEVICE TECHNOLOGY ]
