IDT6116SA/LA
CMOS STATIC RAM 16K (2K x 8-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
DC ELECTRICAL CHARACTERISTICS (1) (Continued)
VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC - 0.2V
6116SA45
6116LA45
6116SA55(3)
6116LA55(3)
6116SA70(3)
6116LA70(3)
6116SA90(3) 6116SA120(3) 6116SA150(3)
6116LA90(3) 6116LA120(3) 6116LA150(3)
Symbol
Parameter
Power Com'l. Mil. Com'l. Mil. Com'l. Mil. Com'l. Mil. Com'l. Mil. Com'l. Mil. Unit
ICC1
Operating Power Supply
Current, CS ≤ VIL,
Outputs Open,
SA
80
90
—
90
—
90
—
90
—
90
—
90 mA
LA
75
85
—
85
—
85
—
85
—
85
—
85
VCC = Max., f = 0
ICC2
ISB
Dynamic Operating
Current, CS ≤ VIL,
VCC = Max.,
SA 100 100
—
—
100
90
—
—
100
90
—
—
100
85
—
—
100
85
—
—
90 mA
85
LA
90
95
(4)
Outputs Open, f = fMAX
Standby Power Supply
Current (TTL Level)
CS ≥ VIH, VCC = Max.,
SA
LA
25
20
25
20
—
—
25
20
—
—
25
20
—
—
25
25
—
—
25
15
—
—
25 mA
15
(4)
Outputs Open, f = fMAX
ISB1
Full Standby Power
Supply Current
(CMOS Level), CS ≥ VHC, LA
VCC = Max., VIN ≥ VHC
or VIN ≤ VLC, f = 0
SA
2
10
—
—
10
—
—
10
—
—
10
—
—
10
—
—
10 mA
0.9
0.1
0.9
0.9
0.9
0.9
0.9
NOTES:
3089 tbl 09
1. All values are maximum guaranteed values.
2. 0°C to + 70°C temperature range only.
3. –55°C to + 125°C temperature range only.
4. fMAX = 1/tRC, only address inouts are toggling at fMAX, f = 0 means address inputs are not changing.
DATA RETENTION CHARACTERISTICS OVER ALL TEMPERATURE RANGES
(LA Version Only) VLC = 0.2V, VHC = VCC – 0.2V
Typ.(1)
VCC
Max.
VCC
Symbol
VDR
Parameter
Test Conditions
Min.
2.0
—
2.0V
—
3.0V
—
2.0V
—
3.0V
—
Unit
V
VCC for Data Retention
Data Retention Current
—
ICCDR
MIL.
COM'L.
0.5
0.5
0
1.5
1.5
—
200
20
300
30
µA
CS ≥ VHC
—
(3)
tCDR
Data Deselect to Data
Retention Time
VIN ≥ VHC or ≤ VLC
—
—
—
ns
(3)
(2)
tR
Operation Recovery Time
Input Leakage Current
tRC
—
—
—
—
—
2
—
2
ns
|ILI|
—
µA
NOTES:
3089 tbl 10
1. TA = + 25°C
2. tRC = Read Cycle Time.
3. This parameter is guaranteed by device characterization, but is not production tested.
5.1
4
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