IDT6116SA/LA
CMOS STATIC RAM 16K (2K x 8-BIT)
MILITARY AND COMMERCIAL TEMPERATURE RANGES
PIN CONFIGURATIONS
CAPACITANCE (TA = +25°C, F = 1.0 MHZ)
Symbol
Parameter(1)
Input Capacitance
I/O Capacitance
Conditions Max. Unit
24
23
22
21
20
19
18
17
16
15
14
13
1
CC
V
A
A
A
A
A
A
A
A
7
6
5
4
CIN
VIN = 0V
8
8
pF
2
3
4
5
6
7
8
9
A
A
8
9
CI/O
NOTE:
VOUT = 0V
pF
P24-2
P24-1
D24-2
D24-1
SO24-2
&
WE
OE
A10
CS
3089 tbl 03
1. This parameter is determined by device characterization, but is not
production tested.
3
2
1
0
0
1
2
I/O
7
S024-4
I/O6
I/O
I/O
I/O
I/O
5
10
11
12
I/O4
3
I/O
GND
3089 drw 02
ABSOLUTE MAXIMUM RATINGS (1)
DIP/SOIC/SOJ
TOP VIEW
Symbol
Rating
Commercial Military
Unit
Terminal Voltage
with Respect to GND –0.5 to + 7.0 –0.5 to +7.0
(2)
VTERM
V
Operating
TA
Temperature
0 to + 70 –55 to +125 °C
–55 to + 125 –65 to +135 °C
–55 to + 125 –65 to +150 °C
Temperature
Under Bias
TBIAS
TSTG
PT
PIN DESCRIPTIONS
Storage
Temperature
A0–A13
I/O0–I/O7
CS
Address Inputs
Data Input/Output
Chip Select
Write Enable
Output Enable
Power
Power
Dissipation
1.0
50
1.0
50
W
WE
IOUT
DC Output Current
mA
OE
NOTES:
3089 tbl 04
VCC
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RAT-
INGS may cause permanent damage to the device. This is a stress rating
onlyandfunctionaloperationofthedeviceattheseoranyotherconditions
abovethoseindicatedintheoperationalsectionsofthisspecificationisnot
implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
GND
Ground
3089 tbl 01
2. VTERM must not exceed VCC +0.5V.
TRUTH TABLE(1)
Mode
Standby
Read
I/O
CS
H
L
OE
X
WE
X
H
H
L
High-Z
L
DATAOUT
High-Z
Read
L
H
Write
L
X
DATAIN
NOTE:
3089 tbl 02
1. H = VIH, L = VIL, X = Don't Care.
5.1
2
IDT [ INTEGRATED DEVICE TECHNOLOGY ]
