PRELIMINARY INFORMATION
ICS3726-12
HIGH PERFORMANCE VCXO
DC Electrical Characteristics
VDD=3.3 V ±5% , Ambient temperature 0 to +70°C, unless stated otherwise
Parameter
Symbol
Conditions
Min.
3.15
2.4
Typ.
Max.
Units
Operating Voltage
VDD
3.45
V
V
V
V
Output High Voltage
Output Low Voltage
V
I
I
I
= -12 mA
= 12 mA
= -4 mA
OH
OH
OL
OH
V
0.4
OL
Output High Voltage (CMOS
Level)
V
VDD-0.4
OH
Operating Supply Current
Short Circuit Current
IDD
No load
6
mA
mA
V
I
±50
OS
VIN, VCXO Control Voltage
V
0
3.3
IA
AC Electrical Characteristics
VDD = 3.3 V ±5%, Ambient Temperature 0 to +70° C, unless stated otherwise
Parameter
Output Frequency
Crystal Pullability
VCXO Gain
Symbol
Conditions
Min. Typ. Max. Units
F
20
52
MHz
ppm
ppm/V
ns
O
F
0V< VIN < 3.3 V, Note 1
+ 200
P
VIN = VDD/2 + 1 V, Note 1
150
Output Rise Time
Output Fall Time
Output Clock Duty Cycle
Period Jitter RMS
Period Jitter P- P
Integrated Jitter RMS
t
0.8 to 2.0 V, C =15 pF
1.5
1.5
60
OR
L
t
2.0 to 0.8 V, C =15 pF
ns
OF
L
t
Measured at 1.4 V, C =15 pF
40
50
6.7
46
1
%
D
L
t
C =15 pF @35.328 MHz
ps
J
J
L
t
C =15 pF@35.328 MHz
ps
L
Integrated 12 kHz to 20 MHz
@ 35.328 MHz
ps
Phase Noise relative to
Carrier
@35.328 MHz Carrier
frequency
@10 Hz
-65
-90
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
@100 Hz
@1 kHz
-120
-140
-147
-147
@10 kHz
@100 kHz
@1 MHz
Note 1: External crystal device must conform with Pullable Crystal Specifications listed on page 3.
MDS 3726-12 B
5
Revision 120505
Integrated Circuit Systems ● 525 Race Street, San Jose, CA 95126 ● tel (408) 297-1201 ● www.icst.com
IDT [ INTEGRATED DEVICE TECHNOLOGY ]
