PRELIMINARY INFORMATION
ICS3726-12
H
IGH
P
ERFORMANCE
VCXO
DC Electrical Characteristics
VDD=3.3 V ±5%
, Ambient temperature 0 to +70° C, unless stated otherwise
Parameter
Operating Voltage
Output High Voltage
Output Low Voltage
Output High Voltage (CMOS
Level)
Operating Supply Current
Short Circuit Current
VIN, VCXO Control Voltage
Symbol
VDD
V
OH
V
OL
V
OH
IDD
I
OS
V
IA
Conditions
I
OH
= -12 mA
I
OL
= 12 mA
I
OH
= -4 mA
No load
Min.
3.15
2.4
Typ.
Max.
3.45
0.4
Units
V
V
V
V
VDD-0.4
6
±50
0
3.3
mA
mA
V
AC Electrical Characteristics
VDD = 3.3 V ±5%,
Ambient Temperature 0 to +70° C, unless stated otherwise
Parameter
Output Frequency
Crystal Pullability
VCXO Gain
Output Rise Time
Output Fall Time
Output Clock Duty Cycle
Period Jitter RMS
Period Jitter P- P
Integrated Jitter RMS
Phase Noise relative to
Carrier
@10 Hz
@100 Hz
@1 kHz
@10 kHz
@100 kHz
@1 MHz
Symbol
F
O
F
P
t
OR
t
OF
t
D
t
J
t
J
Conditions
0V< VIN < 3.3 V, Note 1
VIN = VDD/2 + 1 V, Note 1
0.8 to 2.0 V, C
L
=15 pF
2.0 to 0.8 V, C
L
=15 pF
Measured at 1.4 V, C
L
=15 pF
C
L
=15 pF @35.328 MHz
C
L
=15 pF@35.328 MHz
Integrated 12 kHz to 20 MHz
@ 35.328 MHz
@35.328 MHz Carrier
frequency
Min.
20
+ 200
Typ.
Max. Units
52
MHz
ppm
ppm/V
1.5
1.5
ns
ns
%
ps
ps
ps
150
40
50
6.7
46
1
60
-65
-90
-120
-140
-147
-147
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
dBc/Hz
Note 1: External crystal device must conform with Pullable Crystal Specifications listed on page 3.
MDS 3726-12 B
In te grated Circuit Systems
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