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IC62C1024AL-70QI 参数 Datasheet PDF下载

IC62C1024AL-70QI图片预览
型号: IC62C1024AL-70QI
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×8低功耗CMOS SRAM [128K x 8 Low Power CMOS SRAM]
分类和应用: 内存集成电路静态存储器光电二极管
文件页数/大小: 9 页 / 142 K
品牌: ICSI [ INTEGRATED CIRCUIT SOLUTION INC ]
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IC62C1024AL  
ABSOLUTE MAXIMUM RATINGS(1)  
Symbol Parameter  
Value  
–0.5 to + 7.0  
–45 to + 85  
–65 to + 150  
1.5  
Unit  
V
VTERM  
TBIAS  
TSTG  
PT  
Terminal Voltage with Respect to GND  
Temperature Under Bias  
Storage Temperature  
°C  
°C  
W
Power Dissipation  
IOUT  
DC Output Current (LOW)  
20  
mA  
Notes:  
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause  
permanent damage to the device. This is a stress rating only and functional operation of the  
device at these or any other conditions above those indicated in the operational sections of  
this specification is not implied. Exposure to absolute maximum rating conditions for  
extended periods may affect reliability.  
CAPACITANCE(1,2)  
Symbol  
CIN  
Parameter  
Input Capacitance  
Conditions  
VIN = 0V  
Max.  
6
Unit  
pF  
COUT  
Output Capacitance  
VOUT = 0V  
8
pF  
Notes:  
1. Tested initially and after any design or process changes that may affect these parameters.  
2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 5.0V.  
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)  
Symbol Parameter  
Test Conditions  
Min.  
Max.  
Unit  
VOH  
VOL  
VIH  
VIL  
ILI  
Output HIGH Voltage  
VCC = Min., IOH = –1.0 mA  
VCC = Min., IOL = 2.1 mA  
2.4  
0.4  
V
V
Output LOW Voltage  
Input HIGH Voltage  
Input LOW Voltage(1)  
Input Leakage  
2.2  
–0.3  
VCC + 0.5  
0.8  
V
V
GND  
GND  
VIN  
VCC  
VCC  
Com.  
Ind.  
–2  
–10  
2
10  
µA  
ILO  
Output Leakage  
VOUT  
Com.  
Ind.  
–2  
–10  
2
10  
µA  
Notes:  
1. VIL = –3.0V for pulse width less than 10 ns.  
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)  
-35 ns  
-45 ns  
-55 ns  
-70 ns  
Symbol Parameter  
Test Conditions  
Min. Max.  
Min. Max.  
Min. Max.  
Min. Max.  
Unit  
ICC  
Vcc Dynamic Operating VCC = Max., CE = VIL  
Com.  
Ind.  
100  
110  
90  
100  
80  
90  
70  
80  
mA  
Supply Current  
IOUT = 0 mA, f = fMAX  
ISB1  
TTL Standby Current  
(TTL Inputs)  
VCC = Max.,  
Com.  
10  
15  
10  
15  
10  
15  
10  
15  
mA  
µA  
VIN = VIH or VIL, CE1 VIH, Ind.  
or CE2 VIL, f = 0  
ISB2  
CMOS Standby  
Current (CMOS Inputs)  
VCC = Max.,  
Com.  
Ind.  
500  
750  
500  
750  
500  
750  
500  
750  
CE1 VCC – 0.2V,  
CE2 0.2V, VIN > VCC – 0.2V,  
or VIN 0.2V, f = 0  
Note:  
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.  
4
Integrated Circuit Solution Inc.  
ALSR009-0A 5/7/2002